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BUV42A

STMicroelectronics

BUV42A by STMicroelectronics

STMicroelectronics' BUV42A is a NPN power BJT with max VCEsat of 0.9V, IC of 12A, and Pmax of 120W. Ideal for switching applications in environments up to 200 °C, it features a round package with flange mount style for efficient heat dissipation.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 783 parts In-Stock

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Vyrian

USA . 371 parts In-Stock

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Digiode

USA . 259 parts In-Stock

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LittleDiode

UK . 56 parts In-Stock

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ECAB

Sweden . 38 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 720 parts In-Stock

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$0.653

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$0.588

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720

$0.653

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$0.588

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MKK Technologies

India . 455 parts In-Stock

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$1.228

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$1.228

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DigiPath Technology Company

USA . 455 parts In-Stock

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$1.228

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Corphita

USA . 4,230 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Parana Technologies

USA . 1,524 parts In-Stock

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$0.781

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$0.781

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Northwest PG Solutions

USA . 939 parts In-Stock

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939

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Native Components

USA . 507 parts In-Stock

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Assy Fe

Spain . 5 parts In-Stock

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Overview

Experience unparalleled power and performance with the BUV42A by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors (BJT) like the BUV42A that are perfect for switching applications. With a maximum VCEsat of just 0.9V and a maximum power dissipation of 120W, this NPN transistor offers exceptional efficiency and reliability. Whether you're looking to upgrade your electronics or enhance your projects, the BUV42A provides unmatched value and benefits that will take your designs to the next level.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body material ensures good thermal conductivity, which helps in dissipating heat efficiently during operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and compatible with a wide range of circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high operating speed and efficiency in turning on and off, making it ideal for power control circuits.

Maximum VCEsat: 0.9 V

The low saturation voltage of 0.9V results in minimal power loss and high efficiency during operation, making this transistor energy-efficient.

Package Shape: ROUND

The round package shape provides mechanical robustness and ease of mounting, ensuring reliable performance in various applications.

Terminal Form: PIN/PEG

The PIN/PEG terminal form offers easy and secure connections in the circuit, ensuring stable operation and minimizing the risk of loose connections.

Maximum Power Dissipation (Abs): 120 W

With a maximum power dissipation of 120W, this transistor can handle high power loads without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 300 V

The high collector-emitter voltage rating of 300V allows this transistor to be used in circuits with higher voltage requirements, providing versatility and reliability.

Maximum Collector Current (IC): 12 A

The high collector current rating of 12A enables this transistor to handle large currents, making it suitable for power switching applications that require high current capability.

Maximum Turn Off Time (toff): 3400 ns

The fast turn-off time of 3400ns ensures quick switching speed, reducing switching losses and improving overall efficiency in switching applications.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides reliable solder connections, ensuring good electrical conductivity and preventing oxidation, leading to improved performance and longevity.

Case Connection: COLLECTOR

The case connection being the collector simplifies the circuit design and improves thermal management, enhancing the overall performance and reliability of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV42A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

120 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3400 ns

Maximum VCEsat:

.9 V

Trade Compliance

BUV42A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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