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BUV46FI

STMicroelectronics

BUV46FI by STMicroelectronics

STMicroelectronics BUV46FI is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it has a max operating temp of 150 °C. The transistor features a single configuration in a rectangular package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Digiode

USA . 3,353 parts In-Stock

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Bristol Electronics

USA . 1,837 parts In-Stock

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Sinequanon

UK . 1,737 parts In-Stock

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Anansix

USA . 1,479 parts In-Stock

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Vyrian

USA . 38 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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IDEA Electronic Components Group

UK . 166 parts In-Stock

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$1.822

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$1.639

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166

$1.822

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$1.639

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MKK Technologies

India . 2,002 parts In-Stock

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$3.425

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$3.425

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DigiPath Technology Company

USA . 2,002 parts In-Stock

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$3.425

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$3.425

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Corphita

USA . 2,994 parts In-Stock

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Parana Technologies

USA . 2,161 parts In-Stock

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$2.178

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Native Components

USA . 727 parts In-Stock

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Northwest PG Solutions

USA . 692 parts In-Stock

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Assy Fe

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Overview

Unlock the power of efficient switching with the BUV46FI by STMicroelectronics. Crafted with precision by a trusted manufacturer, this NPN Power Bipolar Junction Transistor is designed for high performance in a variety of applications. With a maximum VCEsat of 5V and a maximum collector current of 5A, this transistor offers reliable operation and durability. Whether you're working on industrial automation or power supplies, the BUV46FI delivers the value, benefits, and advantages you need to bring your projects to life. Choose quality, choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Allows for easy integration into NPN circuits, making it compatible with a wide range of applications.

Configuration: SINGLE

Simplified design and operation with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in turning on and off quickly.

Maximum VCEsat: 5 V

Low VCEsat value helps minimize power losses and improves overall efficiency.

Package Shape: RECTANGULAR

Compact rectangular shape for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections for stable operation.

Maximum Power Dissipation (Abs): 70 W

High power dissipation capability allows the transistor to handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and heat dissipation for improved performance.

Maximum Power Dissipation Ambient: 30 W

Can dissipate heat effectively in ambient conditions up to 30W, ensuring reliable operation in various environments.

Maximum Operating Temperature: 150 °C

Wide operating temperature range up to 150 °C for versatility in different applications.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating for handling high voltage circuits and systems.

Transistor Element Material: SILICON

Silicon material ensures stable and consistent performance over time.

Maximum Turn On Time (ton): 1000 ns

Fast turn-on time of 1000 ns allows for quick switching operations.

Maximum Collector Current (IC): 5 A

High collector current rating of 5A for handling large currents without failure.

Maximum Turn Off Time (toff): 3800 ns

Relatively fast turn-off time of 3800 ns for efficient switching.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Single terminal position for easy soldering and connectivity in circuits.

Case Connection: ISOLATED

Isolated case connection for enhanced safety and protection against short circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV46FI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3800 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

5 V

Trade Compliance

BUV46FI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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