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BUV48AFI

STMicroelectronics

BUV48AFI by STMicroelectronics

STMicroelectronics' BUV48AFI is a NPN Power BJT with 450V VCE, 15A IC, and 65W Ptot. Ideal for switching applications, it has a max operating temp of 125°C and turn-on/off times of 1000ns/3800ns.

Median Price

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Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Digiode

USA . 2,545 parts In-Stock

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ECAB

Sweden . 1,895 parts In-Stock

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Anansix

USA . 974 parts In-Stock

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Vyrian

USA . 504 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 318 parts In-Stock

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Chip Stock

USA . 185 parts In-Stock

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Holdelec - ElecDif-Pro

France . 33 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 31 parts In-Stock

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R&J Components

USA . 16 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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LittleDiode

UK . 9 parts In-Stock

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IDEA Electronic Components Group

UK . 2,136 parts In-Stock

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$0.413

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$0.372

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$0.413

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MKK Technologies

India . 1,657 parts In-Stock

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$0.777

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$0.777

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DigiPath Technology Company

USA . 1,657 parts In-Stock

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$0.777

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$0.777

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Corohmni

South Africa . 209 parts In-Stock

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$1.427

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Aztec Data Supply Inc.

USA . 2,937 parts In-Stock

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$1.482

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AZTECH Wire

Italy . 287 parts In-Stock

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$14.562

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Semicontronic

India . 188 parts In-Stock

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$19.050

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$18.574

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$18.478

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Corphita

USA . 2,909 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

USA . 1,320 parts In-Stock

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Continental Prestige Electronics

USA . 450 parts In-Stock

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Parana Technologies

USA . 282 parts In-Stock

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$0.494

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Bastille Electronics

Australia . 10 parts In-Stock

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Assy Fe

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Overview

STMicroelectronics presents the BUV48AFI Power Bipolar Junction Transistor, a high-quality component designed for switching applications. With a maximum VCEsat of 5V and a collector-emitter voltage of 450V, this NPN transistor offers reliable performance and efficient power dissipation up to 65W. The rectangular package with through-hole terminals ensures easy installation, making it ideal for a variety of industrial and automotive applications. Trust STMicroelectronics for cutting-edge technology that delivers value and reliability to meet your specific needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

Being an NPN transistor, it allows for easy integration into circuits and offers high efficiency in switching applications.

Configuration: SINGLE

This single configuration transistor is compact and simplifies circuit design, making it a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and efficient switching performance.

Maximum VCEsat: 5 V

With a low maximum VCEsat of 5V, this transistor minimizes power loss and heat dissipation, improving overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape provides a stable and secure mounting option for the transistor, ensuring reliable operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer easy soldering and secure connections, making installation and maintenance hassle-free.

No. of Terminals: 3

With 3 terminals, this transistor provides simple connectivity in circuits, reducing complexity and potential points of failure.

Maximum Power Dissipation (Abs): 65 W

The high absolute maximum power dissipation of 65W ensures the transistor can handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers efficient heat dissipation and mechanical stability, enhancing the transistor's performance and reliability.

Maximum Power Dissipation Ambient: 65 W

The transistor can dissipate up to 65W of power in ambient conditions, making it suitable for a wide range of applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high-temperature environments, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 450 V

A high maximum collector-emitter voltage rating of 450V allows the transistor to handle high voltage circuits with ease.

Transistor Element Material: SILICON

Silicon material in the transistor element provides stable performance and high reliability in various operating conditions.

Maximum Turn On Time (ton): 1000 ns

The low turn-on time of 1000ns ensures fast switching speed, ideal for applications requiring rapid on/off transitions.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15A, this transistor can handle high current loads, making it versatile for different applications.

Maximum Turn Off Time (toff): 3800 ns

The maximum turn-off time of 3800ns ensures efficient switching performance and reduces power loss during transitions.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and ensures easy installation, suitable for various electronic applications.

Case Connection: ISOLATED

The isolated case connection provides electrical insulation and protects the transistor from external interference, ensuring stable and reliable operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV48AFI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

65 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3800 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

5 V

Trade Compliance

BUV48AFI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-14-515-6828, 5961145156828

NIIN

145156828

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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