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BTB41-400B

STMicroelectronics

BTB41-400B by STMicroelectronics

BTB41-400B by STMicroelectronics is a TRIAC with 400V repetitive peak off-state voltage, 45A max RMS on-state current, and 100mA max DC gate trigger current. It is used in applications requiring precise AC power control such as dimmers, motor speed controllers, and heating control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,953 parts In-Stock

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3,953

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Anansix

USA . 2,776 parts In-Stock

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2,776

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ECAB

Sweden . 598 parts In-Stock

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598

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Vyrian

USA . 168 parts In-Stock

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168

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 295 parts In-Stock

1+ parts

$2.543

100+ parts

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1k+ parts

$2.289

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295

$2.543

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$2.289

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MKK Technologies

India . 1,844 parts In-Stock

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$4.782

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1,844

$4.782

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DigiPath Technology Company

USA . 1,844 parts In-Stock

1+ parts

$4.782

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1,844

$4.782

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Northwest PG Solutions

USA . 2,365 parts In-Stock

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2,365

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Corphita

USA . 2,087 parts In-Stock

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2,087

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Native Components

USA . 665 parts In-Stock

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665

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Parana Technologies

USA . 21 parts In-Stock

1+ parts

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$3.040

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21

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$3.040

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Overview

Unleash the power of the BTB41-400B from STMicroelectronics, a top-tier manufacturer known for superior quality and innovation. This TRIAC device is perfect for a wide range of applications with its impressive features and reliable performance. Designed for efficiency and durability, this product offers customers exceptional value and benefits. Whether you're looking to control AC power or enhance your electronic projects, the BTB41-400B delivers unmatched advantages that will take your creations to the next level. Choose excellence, choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the product suitable for various environments.

Maximum DC Gate Trigger Current: 100 mA

High trigger current allows for reliable and stable operation of the TRIAC.

Configuration: SINGLE

Simplified design with a single configuration for ease of use and installation.

Package Shape: RECTANGULAR

Rectangular shape enables easy integration into circuit designs and mounting on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection to the circuit board.

Maximum Leakage Current: 4 mA

Low leakage current helps in reducing power losses and improving efficiency.

No. of Terminals: 3

Simple 3-terminal configuration for straightforward connection in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers easy and secure mounting in various applications.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in challenging conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Logic level TRIAC provides precise control over switching and modulation of AC power.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures the TRIAC can operate in extreme cold conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good conductivity and solderability for secure connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and wiring in the circuit.

Maximum RMS On-state Current: 45 A

High on-state current rating allows the TRIAC to handle heavy loads efficiently.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage enables easy control and switching of the TRIAC.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures reliable performance in AC switching applications.

Maximum Holding Current: 80 mA

Sufficient holding current rating ensures stable operation and prevents false triggering.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB41-400B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Configuration:

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

80 mA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

4 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

45 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTB41-400B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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