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BTB41-200B

STMicroelectronics

BTB41-200B by STMicroelectronics

STMicroelectronics BTB41-200B is a TRIAC with 1.6V max on-state voltage, 50mA DC gate trigger current, and 4mA leakage current. It operates b/w -40 °C to 110°C, suitable for AC power control applications requiring up to 40A RMS on-state current and 200V repetitive peak off-state voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 2,402 parts In-Stock

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Digiode

USA . 441 parts In-Stock

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Vyrian

USA . 117 parts In-Stock

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Northwest PG Solutions

USA . 2,343 parts In-Stock

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$2.955

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IDEA Electronic Components Group

UK . 1,556 parts In-Stock

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$3.027

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$2.724

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MKK Technologies

India . 313 parts In-Stock

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$5.692

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DigiPath Technology Company

USA . 313 parts In-Stock

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$5.692

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Parana Technologies

USA . 2,221 parts In-Stock

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$3.619

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Corphita

USA . 1,039 parts In-Stock

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Native Components

USA . 693 parts In-Stock

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Overview

Upgrade your electronic devices with the BTB41-200B by STMicroelectronics, a top-quality TRIAC component designed for reliable performance. With a maximum RMS On-state current of 40A and a Repetitive Peak Off-state Voltage of 200V, this TRIAC offers exceptional efficiency and durability. Whether used in lighting controls, motor speed control, or heating applications, the BTB41-200B delivers superior performance that will exceed your expectations. Trust STMicroelectronics for cutting-edge technology and unparalleled reliability in every product. Choose the BTB41-200B for unmatched value and seamless operation in all your projects.

Feature Benefit Bullets

Maximum On-state Voltage: 1.6 V

Low on-state voltage helps in reducing power loss and heat dissipation, making the product more energy efficient.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current ensures reliable and consistent switching performance, making the product suitable for various applications.

Maximum Leakage Current: 4 mA

Low leakage current helps in minimizing power wastage when the device is in the off-state, enhancing overall efficiency.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows the product to be used in diverse environmental conditions without compromising performance.

Trigger Device Type: TRIAC

Being a TRIAC, the product is suitable for AC switching applications and offers bidirectional control of current flow.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable performance even in cold environments, increasing the product's versatility.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and ensures secure connections, enhancing the product's durability.

Maximum RMS On-state Current: 40 A

High on-state current rating allows the product to handle large loads, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures efficient triggering of the device, improving overall performance and reliability.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating enables the product to withstand voltage spikes and surges, enhancing its robustness.

Minimum Critical Rate of Rise of Off-state Voltage: 150 V/us

High critical rate of rise ensures fast and efficient turn-off of the device, increasing its reliability in high-frequency applications.

Maximum Holding Current: 80 mA

High holding current ensures the device remains in the on-state even under transient conditions, improving operational stability.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB41-200B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

150 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

80 mA

JESD-609 Code:

e0

Maximum Leakage Current:

4 mA

Maximum On-state Voltage:

1.6 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

Trade Compliance

BTB41-200B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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