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BFR106E6327

Siemens

BFR106E6327 by Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

Median Price

$0.593

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 5,859 parts In-Stock

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$1.140

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$0.499

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$0.233

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$0.152

5,859

$1.140

$0.499

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$0.152

Chip1Stop

Japan . 42,000 parts In-Stock

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$0.097

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Verical

USA . 138 parts In-Stock

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$0.593

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Vyrian

USA . 481 parts In-Stock

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$0.097

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TME

Poland . 1,402 parts In-Stock

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$0.300

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$0.151

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$0.131

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$0.121

1,402

$0.300

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Digiode

USA . 442 parts In-Stock

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$0.408

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ComSIT USA

USA . 7,227 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,235 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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$0.109

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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ECAB

Sweden . 3,000 parts In-Stock

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Standard Data Resources

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Sea View Technologies

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Bristol Electronics

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Prism Electronics

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CoreStaff

Japan . 258 parts In-Stock

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$0.077

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$0.071

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$0.071

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Native Components

USA . 226 parts In-Stock

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$0.290

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$0.279

226

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Northwest PG Solutions

USA . 252 parts In-Stock

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$0.319

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$0.282

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Corphita

USA . 905 parts In-Stock

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$0.387

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Modulus Dynamics

Lithuania . 12,153 parts In-Stock

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$1.933

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$1.856

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$1.778

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Andel Nordic

Denmark . 644 parts In-Stock

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$19.040

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$13.330

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644

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$13.330

A-Z Elektronik GmbH

Germany . 8,220 parts In-Stock

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Lixinc

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Glotronic Ltd.

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Cyclops Electronics Ltd (Excess)

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Kepictronics

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Perfect Parts

USA . 560 parts In-Stock

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Overview

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR106E6327 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Siemens

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR106E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Siemens

Siemens is an industrial conglomerate, with businesses selling components and equipment for factory automation, railway equipment, electrical distribution equipment, and medical equipment. Through spinoffs it owns a controlling stake in separately listed Siemens Healthineers and minority take in Siemens Energy, also publicly listed. Healthineers supplies medical imaging equipment, while Siemens Energy supplies power generation, and wind turbines, respectively.

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