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NE68135-A

Renesas Electronics

NE68135-A by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .065 A; Maximum Collector-Base Capacitance: .7 pF;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NE68135-A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

X-CQMW-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

UNSPECIFIED

Package Style (Meter):

MICROWAVE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

QUAD

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NE68135-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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