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SMMBFJ175LT1G

Onsemi

SMMBFJ175LT1G by Onsemi

SMMBFJ175LT1G by Onsemi is a P-CHANNEL FET with 3 terminals and 0.225W power dissipation. Ideal for small outline applications, it operates in depletion mode with max drain current of 0.06A and on resistance of 125 ohm. With peak reflow temp at 260C, it suits AEC-Q101 standards for automotive electronics.

Median Price

$0.710

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,880 parts In-Stock

1+ parts

$0.290

100+ parts

$0.151

1k+ parts

$0.126

10k+ parts

-

3,880

$0.290

$0.151

$0.126

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Mouser Electronics

USA . 707 parts In-Stock

1+ parts

$0.710

100+ parts

$0.315

1k+ parts

$0.216

10k+ parts

-

707

$0.710

$0.315

$0.216

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Adafruit Industries

USA . 300 parts In-Stock

1+ parts

$0.735

100+ parts

$0.669

1k+ parts

$0.603

10k+ parts

-

300

$0.735

$0.669

$0.603

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.178

100+ parts

-

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500

$0.178

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Digiode

USA . 1,602 parts In-Stock

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$0.437

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1,602

$0.437

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Chip Stock

USA . 60,000 parts In-Stock

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Flip Electronics

USA . 30,000 parts In-Stock

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NAC Semi

USA . 24,000 parts In-Stock

1+ parts

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$0.274

24,000

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$0.274

Vyrian

USA . 4,667 parts In-Stock

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4,667

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Distributors (Availability)

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Corohmni

South Africa . 439 parts In-Stock

1+ parts

$0.174

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-

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439

$0.174

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Continental Prestige Electronics

USA . 5,291 parts In-Stock

1+ parts

$0.178

100+ parts

-

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10k+ parts

$0.174

5,291

$0.178

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-

$0.174

Argo Parts USA

USA . 4,906 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

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10k+ parts

$0.172

4,906

$0.178

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-

$0.172

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.178

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1,000

$0.178

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Ampacity Inc.

Singapore . 4,296 parts In-Stock

1+ parts

$0.391

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4,296

$0.391

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Corphita

USA . 1,227 parts In-Stock

1+ parts

$0.414

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1,227

$0.414

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Component Stockers USA

USA . 10,897 parts In-Stock

1+ parts

$0.450

100+ parts

$0.250

1k+ parts

$0.140

10k+ parts

$0.110

10,897

$0.450

$0.250

$0.140

$0.110

Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$0.735

100+ parts

$0.669

1k+ parts

$0.603

10k+ parts

-

300

$0.735

$0.669

$0.603

-

Semicontronic

India . 4,307 parts In-Stock

1+ parts

$0.980

100+ parts

$0.956

1k+ parts

$0.951

10k+ parts

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4,307

$0.980

$0.956

$0.951

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QUARKTWIN TECHNOLOGY LTD

USA . 16,450 parts In-Stock

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TANS Electronics

Latvia . 5,885 parts In-Stock

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Infinite Electronics LLP (Excess)

. 5,295 parts In-Stock

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5,295

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 4,450 parts In-Stock

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Kulean Microsystems

USA . 2,794 parts In-Stock

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UHIMA Technologies

Türkiye . 838 parts In-Stock

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SupplyDigital Components

Austria . 74 parts In-Stock

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Overview

Unleash the power of innovation with the SMMBFJ175LT1G by Onsemi, a top-quality P-CHANNEL small signal field effect transistor that sets the standard for performance and reliability. Manufactured by industry leader Onsemi, this FET is designed for applications requiring precision and efficiency. With its sleek rectangular package shape and gull wing terminals, this transistor offers seamless integration and optimum functionality. Experience unparalleled value and benefits with the SMMBFJ175LT1G, delivering enhanced performance and durability for your electronic projects. Elevate your designs to new heights with this cutting-edge component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

Offers specific characteristics and performance suitable for certain circuit designs and requirements.

Surface Mount: YES

Facilitates easy and efficient assembly onto circuit boards, saving time and effort during production.

Operating Mode: DEPLETION MODE

Allows for versatile control and operation in different electronic circuits and systems.

Maximum Power Dissipation: 0.225 W

Handles a decent amount of power without overheating, ensuring reliable performance under various conditions.

Field Effect Transistor Technology: JUNCTION

Provides high performance and efficiency in signal amplification and control applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in demanding environments.

Maximum Drain-Source On Resistance: 125 ohm

Offers low resistance, allowing for efficient power flow and reduced heat generation.

Reference Standard: AEC-Q101

Complies with automotive reliability standards, ensuring consistent and safe operation in automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SMMBFJ175LT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.06 A

Maximum Drain-Source On Resistance:

125 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5.5 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.225 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SMMBFJ175LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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