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SMMBF170LT3

Onsemi

SMMBF170LT3 by Onsemi

SMMBF170LT3 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications, this small outline transistor operates in enhancement mode at up to 150 °C temperature.

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2

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1k+

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Vyrian

USA . 1,092 parts In-Stock

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Digiode

USA . 654 parts In-Stock

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Kulean Microsystems

USA . 5,874 parts In-Stock

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Problanco Electronics

Mexico . 5,009 parts In-Stock

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TANS Electronics

Latvia . 4,134 parts In-Stock

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SupplyDigital Components

Austria . 2,189 parts In-Stock

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Corphita

USA . 1,252 parts In-Stock

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UHIMA Technologies

Türkiye . 441 parts In-Stock

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Corohmni

South Africa . 234 parts In-Stock

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Overview

Unlock the power of innovation with the SMMBF170LT3 by Onsemi. As a leader in Small Signal Field Effect Transistors, Onsemi delivers unmatched quality and reliability. This N-CHANNEL transistor with built-in diode is perfect for switching applications, offering a minimum DS breakdown voltage of 60V and maximum drain current of 0.5A. With a surface mount design and operating temperature of up to 150 °C, this transistor provides superior performance in a compact package. Elevate your projects with the SMMBF170LT3 and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection to the internal components of the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel type offers high electron mobility and fast switching speeds, making it suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for efficient use of the transistor in circuits where reverse current protection is required, increasing overall circuit performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast turn-on and turn-off times, enhancing the efficiency of the circuit.

Surface Mount: YES

Surface mount capability enables easy installation on PCBs, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this transistor can handle high voltage conditions without compromising performance.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement on PCBs and efficient use of space within the circuit.

Terminal Form: GULL WING

Gull wing terminal form provides strong mechanical connection and easy soldering onto PCBs, ensuring reliable performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers low static power consumption and fast switching speeds, making it suitable for high-performance applications.

No. of Terminals: 3

Three terminals provide the necessary connections for easy integration into circuit designs.

Package Style (Meter): SMALL OUTLINE

Small outline package style allows for compact and space-efficient designs, ideal for applications with limited space constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency, low noise, and fast response times, meeting the demands of modern electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, ensuring reliable performance under extreme conditions.

Transistor Element Material: SILICON

Silicon material provides high thermal conductivity and low energy loss, contributing to the overall efficiency and reliability of the transistor.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers excellent solderability and corrosion resistance, ensuring long-term reliability in various environmental conditions.

Maximum Drain Current (ID): 0.5 A

With a maximum drain current of 0.5 A, this transistor can handle moderate current loads, making it suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 5 ohm

Low drain-source on resistance of 5 ohms minimizes power loss and heat dissipation, improving overall efficiency and performance of the transistor.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and allows for easy connection to other components, enhancing overall circuit functionality.

Technical Specifications

Small Signal Field Effect Transistors (FET) SMMBF170LT3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMBF170LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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