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SMMBF0201NLT1

Onsemi

SMMBF0201NLT1 by Onsemi

SMMBF0201NLT1 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.3A ID, and 1 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has GULL WING terminals and operates up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,914 parts In-Stock

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Digiode

USA . 1,322 parts In-Stock

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Problanco Electronics

Mexico . 7,247 parts In-Stock

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TANS Electronics

Latvia . 4,092 parts In-Stock

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Corphita

USA . 2,212 parts In-Stock

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SupplyDigital Components

Austria . 1,744 parts In-Stock

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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Corohmni

South Africa . 489 parts In-Stock

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Kulean Microsystems

USA . 296 parts In-Stock

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Overview

Discover the high-quality SMMBF0201NLT1 by Onsemi, a top-tier manufacturer known for its reliable and innovative solutions in the field of Small Signal Field Effect Transistors (FET). This product offers superior performance in switching applications, with a built-in diode for added convenience. With a minimum DS breakdown voltage of 20V and maximum drain current of 0.3A, this N-channel transistor is designed to enhance your circuits with efficiency and precision. Upgrade your electronics with the SMMBF0201NLT1 and experience the benefits of advanced technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching of current in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor.

Transistor Application: SWITCHING

Ideal for applications requiring fast switching speeds.

Surface Mount: YES

Easy to mount on circuit boards, saving space and allowing for automated assembly.

Minimum DS Breakdown Voltage: 20 V

Can withstand high voltages to prevent damage during operation.

Package Shape: RECTANGULAR

Allows for easy integration into various electronic devices.

Terminal Form: GULL WING

Facilitates soldering and ensures secure connections.

Operating Mode: ENHANCEMENT MODE

Enhances control over the transistor's conductance for precise switching.

No. of Terminals: 3

Provides necessary connections for input, output, and power.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and low noise characteristics.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures for reliable operation in various environments.

Transistor Element Material: SILICON

Provides excellent conductivity and reliability.

Terminal Finish: TIN LEAD

Ensures good electrical conductivity and resistance to corrosion.

Maximum Drain Current (ID): 0.3 A

Capable of handling moderate current loads in electronic circuits.

Maximum Drain-Source On Resistance: 1 ohm

Provides low resistance for efficient current flow and minimal power loss.

Terminal Position: DUAL

Allows for flexible connection options in circuit layout.

Technical Specifications

Small Signal Field Effect Transistors (FET) SMMBF0201NLT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.3 A

Maximum Drain-Source On Resistance:

1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMBF0201NLT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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