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SB30W03T(TP-FA)

Onsemi

SB30W03T(TP-FA) by Onsemi

SB30W03T(TP-FA) by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 3A. It has a fast reverse recovery time of 0.03us, making it suitable for high-speed applications in electronics where low power loss is critical. This surface-mount diode can operate at temperatures up to 125 °C, ideal for various power supply and voltage regulation circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,915 parts In-Stock

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Digiode

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Kulean Microsystems

USA . 6,862 parts In-Stock

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TANS Electronics

Latvia . 6,375 parts In-Stock

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Problanco Electronics

Mexico . 3,165 parts In-Stock

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Corphita

USA . 2,424 parts In-Stock

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SupplyDigital Components

Austria . 910 parts In-Stock

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UHIMA Technologies

Türkiye . 591 parts In-Stock

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Corohmni

South Africa . 487 parts In-Stock

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Overview

Discover the SB30W03T(TP-FA) by Onsemi, a high-quality rectifier diode that delivers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this surface mount diode offers a fast reverse recovery time of 0.03 us and a maximum output current of 3 A. Ideal for a wide range of applications, this Schottky diode provides a maximum repetitive peak reverse voltage of 30 V, making it perfect for use in power supplies, LED lighting, and more. Experience the value and benefits of the SB30W03T(TP-FA) with its low forward voltage of 0.55 V, ensuring efficient power conversion and improved energy savings.

Feature Benefit Bullets

Surface Mount: YES

The surface mount feature allows for easy installation and saves space on circuit boards, making it ideal for compact electronic devices.

Maximum Reverse Recovery Time: 0.03 us

The fast reverse recovery time ensures efficient operation and helps reduce power loss in the circuit.

Maximum Operating Temperature: 125 °C

With a high operating temperature, this diode can withstand demanding environments and offers reliable performance under various conditions.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is specifically designed for converting AC to DC and is suitable for power supply applications.

Maximum Forward Voltage (VF): 0.55 V

The low forward voltage drop leads to minimal power loss and high efficiency in the circuit.

Maximum Output Current: 3 A

With a high output current rating, this diode can handle larger power loads and is suitable for applications requiring higher currents.

Technology: SCHOTTKY

Schottky diodes have a lower forward voltage drop and faster switching speed compared to standard diodes, making them ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high reverse voltage rating allows for reliable operation and protection against voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 20 A

The high non-repetitive peak forward current rating ensures the diode can handle short-term peak currents without damage, making it robust and reliable.

Technical Specifications

Diodes & Rectifiers SB30W03T(TP-FA) attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

20 A

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

3 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SB30W03T(TP-FA) Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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