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SB30W03T(TP)

Onsemi

SB30W03T(TP) by Onsemi

SB30W03T(TP) by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 3A. It has a fast reverse recovery time of 0.03us, making it suitable for high-speed applications in electronics where efficiency is crucial. With a max operating temperature of 125 °C, it can handle demanding conditions while providing reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,388 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 6,569 parts In-Stock

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TANS Electronics

Latvia . 3,163 parts In-Stock

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SupplyDigital Components

Austria . 2,024 parts In-Stock

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Problanco Electronics

Mexico . 1,877 parts In-Stock

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Corphita

USA . 601 parts In-Stock

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Corohmni

South Africa . 322 parts In-Stock

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UHIMA Technologies

Türkiye . 302 parts In-Stock

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Overview

Experience superior performance and reliability with the SB30W03T(TP) Schottky rectifier diode from Onsemi. As a leading manufacturer in the diodes & rectifiers category, Onsemi ensures top-notch quality and innovation in all their products. This diode boasts a maximum reverse recovery time of 0.03 us and a maximum output current of 3 A, making it ideal for a wide range of applications. Trust Onsemi to deliver value and efficiency with the SB30W03T(TP), providing customers with the benefits of faster switching speed, lower forward voltage, and enhanced power efficiency. Elevate your projects with this high-quality diode that guarantees superior performance every time.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 0.03 us

The low reverse recovery time ensures quick switching and efficient operation of the diode, making it suitable for high-speed applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, making it reliable in various environments.

Diode Type: RECTIFIER DIODE

This rectifier diode is specifically designed for converting AC to DC efficiently, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.55 V

The low forward voltage drop results in minimal power loss and high efficiency in the circuit, making it a cost-effective choice for power conversion.

Maximum Output Current: 3 A

With a maximum output current of 3 A, this diode can handle high current loads, making it suitable for applications requiring a significant amount of power.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage drop and fast switching speeds, providing improved efficiency and performance in high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating ensures reliable operation and protection against reverse voltage spikes, making it suitable for voltage regulation circuits.

Maximum Non Repetitive Peak Forward Current: 20 A

The diode can withstand high non-repetitive peak forward currents without damage, ensuring durability and protection during transient conditions in the circuit.

Technical Specifications

Diodes & Rectifiers SB30W03T(TP) attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

20 A

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

3 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Trade Compliance

SB30W03T(TP) Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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