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SB30W03Z

Onsemi

SB30W03Z by Onsemi

SB30W03Z by Onsemi is a Schottky rectifier diode with max VF of 0.55V and 3A output current. With a max reverse voltage of 30V, it's ideal for applications requiring high efficiency and fast switching such as power supplies and battery chargers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,996 parts In-Stock

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Digiode

USA . 1,214 parts In-Stock

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Problanco Electronics

Mexico . 7,171 parts In-Stock

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SupplyDigital Components

Austria . 6,704 parts In-Stock

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TANS Electronics

Latvia . 3,974 parts In-Stock

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Corphita

USA . 2,293 parts In-Stock

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Kulean Microsystems

USA . 691 parts In-Stock

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UHIMA Technologies

Türkiye . 190 parts In-Stock

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Corohmni

South Africa . 151 parts In-Stock

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Overview

Upgrade your electronics with the SB30W03Z by Onsemi. Known for their superior quality and reliability, Onsemi offers top-of-the-line diodes and rectifiers that are essential for a wide range of applications. The SB30W03Z stands out with its high performance Schottky technology, maximum output current of 3A, and maximum forward voltage of 0.55V. Whether you're working on power supplies, inverters, or battery chargers, this product delivers unparalleled value, efficiency, and durability to meet all your electronic needs. Trust Onsemi to provide the best in diode technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides good insulation and protection for the diode, ensuring durability and reliability.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easier to use in various applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop of 0.55V minimizes power loss and heat dissipation, improving efficiency.

Maximum Output Current: 3 A

High output current of 3A allows for the handling of larger loads, making it suitable for a wide range of applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and lower voltage drops compared to standard diodes, reducing power loss and improving performance.

Technical Specifications

Diodes & Rectifiers SB30W03Z attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SB30W03Z Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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