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SB30-04A

Onsemi

SB30-04A by Onsemi

SB30-04A by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 3A. It has a max reverse voltage of 40V and non-repetitive forward current of 120A, making it ideal for high-power applications in electronics. The diode comes in a plastic/epoxy package with axial terminals, suitable for various circuit designs requiring efficient power management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,332 parts In-Stock

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Digiode

USA . 1,571 parts In-Stock

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Kulean Microsystems

USA . 7,646 parts In-Stock

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SupplyDigital Components

Austria . 3,773 parts In-Stock

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TANS Electronics

Latvia . 3,167 parts In-Stock

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UHIMA Technologies

Türkiye . 799 parts In-Stock

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799

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Problanco Electronics

Mexico . 631 parts In-Stock

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Corphita

USA . 217 parts In-Stock

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Corohmni

South Africa . 152 parts In-Stock

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Overview

Experience superior quality and performance with the SB30-04A by Onsemi. As a trusted manufacturer in the industry of diodes and rectifiers, Onsemi delivers unmatched reliability and innovation. This Schottky rectifier diode offers a maximum forward voltage of 0.55V and output current of 3A, making it ideal for a wide range of applications. From power supplies to automotive electronics, this product provides exceptional value, efficiency, and precision for all your electrical needs. Elevate your projects with the SB30-04A and discover the difference that Onsemi can make for you.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy package material provides durability and protection, making the diode reliable for long-term use.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easier to work with this diode.

Package Shape: ROUND

Round shape allows for easy mounting and fits well in various types of circuits or devices.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces the chances of errors.

Package Style (Meter): LONG FORM

Long form style provides versatility in mounting options and ensures compatibility with different circuit layouts.

Terminal Position: AXIAL

Axial terminal position enables efficient heat dissipation and facilitates easy soldering or connection.

Diode Type: RECTIFIER DIODE

Rectifier diode function allows for efficient current flow in one direction, making it ideal for rectifying circuits.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop ensures minimal power loss and high efficiency in the circuit.

Maximum Output Current: 3 A

High output current capacity makes this diode suitable for applications requiring moderate to high current flow.

Technology: SCHOTTKY

Schottky technology offers fast switching speed, low reverse leakage, and high temperature stability for enhanced performance.

Terminal Form: WIRE

Wire terminals provide secure connections and ease of installation in various electronic systems.

Maximum Repetitive Peak Reverse Voltage: 40 V

High reverse voltage rating ensures protection against voltage spikes or reverse polarity situations.

Maximum Non Repetitive Peak Forward Current: 120 A

Capable of handling high peak forward current for short durations, making it suitable for surge protection applications.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability, reliability, and performance characteristics for a wide range of applications.

Technical Specifications

Diodes & Rectifiers SB30-04A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SB30-04A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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