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SB3003CH-TL-E

Onsemi

SB3003CH-TL-E by Onsemi

SB3003CH-TL-E by Onsemi is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.52V. It has a fast reverse recovery time of 0.02us, making it suitable for high-speed applications. With a max repetitive peak reverse voltage of 30V, it is ideal for use in electronics requiring efficient power management.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 150 parts In-Stock

1+ parts

$0.107

100+ parts

$0.097

1k+ parts

$0.088

10k+ parts

-

150

$0.107

$0.097

$0.088

-

Rochester

USA . 10,073 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.215

10,073

-

$0.291

$0.241

$0.215

DigiKey

USA . 10,073 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.360

10k+ parts

-

10,073

-

-

$0.360

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Verical

USA . 10,073 parts In-Stock

1+ parts

-

100+ parts

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$0.269

10,073

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-

-

$0.269

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 121 parts In-Stock

1+ parts

$0.102

100+ parts

-

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121

$0.102

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Vyrian

USA . 1,388 parts In-Stock

1+ parts

$0.107

100+ parts

-

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1,388

$0.107

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DigiKey Marketplace

USA . 10,073 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10,073

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,428 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

-

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1,428

$0.096

-

-

-

Corohmni

South Africa . 315 parts In-Stock

1+ parts

$0.107

100+ parts

-

1k+ parts

-

10k+ parts

-

315

$0.107

-

-

-

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.107

100+ parts

$0.097

1k+ parts

$0.088

10k+ parts

-

150

$0.107

$0.097

$0.088

-

QUARKTWIN TECHNOLOGY LTD

USA . 14,953 parts In-Stock

1+ parts

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14,953

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Continental Prestige Electronics

USA . 10,073 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.230

10k+ parts

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10,073

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-

$0.230

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TANS Electronics

Latvia . 7,909 parts In-Stock

1+ parts

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7,909

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Kepictronics

USA . 6,847 parts In-Stock

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6,847

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Metaverse IC Inc.

Canada . 6,847 parts In-Stock

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6,847

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SupplyDigital Components

Austria . 6,603 parts In-Stock

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6,603

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Problanco Electronics

Mexico . 3,453 parts In-Stock

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3,453

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Perfect Parts

USA . 2,858 parts In-Stock

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2,858

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Kulean Microsystems

USA . 1,094 parts In-Stock

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1,094

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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341

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Overview

Discover the SB3003CH-TL-E by Onsemi, a high-quality Schottky rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed for various applications in electronics. With a maximum output current of 3A and a low forward voltage of 0.52V, this diode provides efficient power management and protection for your circuits. Experience the benefits of fast reverse recovery time, minimal reverse current, and a wide operating temperature range from -55 to 125°C. Upgrade your designs with the SB3003CH-TL-E and enjoy superior performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protects the internal components of the diode from external elements.

Config: SINGLE

The single configuration makes it easy to integrate this diode into a circuit without the complexity of multiple configurations.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Recovery Time: 0.02 us

The low reverse recovery time ensures fast operation and efficiency in switching applications.

Maximum Reverse Current: 42 uA

The low reverse current helps in minimizing power losses and improving overall efficiency of the diode.

Package Shape: RECTANGULAR

The rectangular shape offers ease of placement and soldering on the PCB, making it convenient for assembly.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting the diode to other components in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even under demanding conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for operation in cold environments without compromise in performance.

Terminal Finish: TIN BISMUTH

The tin bismuth finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in PCB layout and wiring configurations.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature prevents component damage during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for proper soldering of the diode onto the PCB.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is suitable for converting AC to DC voltage efficiently.

Maximum Forward Voltage (VF): 0.52 V

The low forward voltage drop results in minimal power loss and high efficiency in the circuit.

Maximum Output Current: 3 A

The high maximum output current capability makes this diode suitable for high-power applications.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and a secure mechanical connection during PCB assembly.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage rating ensures the diode can handle voltage spikes without damage.

Maximum Non Repetitive Peak Forward Current: 20 A

The high maximum non-repetitive peak forward current rating allows the diode to handle short-term surge currents effectively.

Diode Element Material: SILICON

Silicon diode elements are known for their reliability and high-performance characteristics, making this diode a dependable choice.

Technical Specifications

Diodes & Rectifiers SB3003CH-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.52 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

42 uA

Maximum Reverse Recovery Time:

.02 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SB3003CH-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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