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SB30W03T

Onsemi

SB30W03T by Onsemi

SB30W03T by Onsemi is a Schottky rectifier diode with VF of 0.55V and 3A output current. It has a max reverse voltage of 30V and non-repetitive forward current of 20A. Ideal for power supply, battery charging, and voltage regulation applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Bristol Electronics

USA . 21,700 parts In-Stock

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Dan-Mar Components

USA . 21,700 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 21,000 parts In-Stock

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Vyrian

USA . 2,015 parts In-Stock

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PC Components Company LLC

USA . 700 parts In-Stock

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700

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Digiode

USA . 204 parts In-Stock

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Kulean Microsystems

USA . 5,560 parts In-Stock

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SupplyDigital Components

Austria . 4,056 parts In-Stock

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TANS Electronics

Latvia . 3,153 parts In-Stock

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Problanco Electronics

Mexico . 2,176 parts In-Stock

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Kepictronics

USA . 1,655 parts In-Stock

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Corphita

USA . 1,006 parts In-Stock

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UHIMA Technologies

Türkiye . 444 parts In-Stock

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Corohmni

South Africa . 200 parts In-Stock

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Overview

Experience the superior quality and performance of the SB30W03T by Onsemi, a leading manufacturer in the field of Diodes & Rectifiers. This RECTIFIER DIODE offers a maximum Forward Voltage of 0.55 V and an Output Current of 3 A, making it ideal for a wide range of applications. With its innovative SCHOTTKY technology and impressive specs, this diode provides customers with unmatched value, efficiency, and reliability. Upgrade your projects with the SB30W03T and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Maximum Forward Voltage (VF): 0.55 V

The low forward voltage drop of 0.55 V indicates efficient performance and low power loss, making it a cost-effective choice.

Maximum Output Current: 3 A

With a high output current of 3 A, this rectifier diode can handle heavy loads and is suitable for various applications.

Technology: SCHOTTKY

The Schottky technology used in this diode provides fast switching speeds and low forward voltage drop, enhancing overall performance.

Maximum Repetitive Peak Reverse Voltage: 30 V

A maximum reverse voltage of 30 V ensures reliable performance and protection against reverse polarity, making it a durable choice.

Maximum Non Repetitive Peak Forward Current: 20 A

The high non-repetitive forward current rating of 20 A allows the diode to handle short-term peak loads, making it reliable in demanding situations.

Technical Specifications

Diodes & Rectifiers SB30W03T attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

20 A

Maximum Output Current:

3 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Trade Compliance

SB30W03T Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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