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SB30-03P

Onsemi

SB30-03P by Onsemi

The Onsemi SB30-03P is a Schottky rectifier diode with VF of 0.55V and 3A output current. It has a max reverse voltage of 30V and non-repetitive forward current of 10A. Ideal for surface mount applications in electronics requiring efficient power conversion.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,160 parts In-Stock

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2,160

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Vyrian

USA . 348 parts In-Stock

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348

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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SupplyDigital Components

Austria . 7,861 parts In-Stock

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TANS Electronics

Latvia . 4,870 parts In-Stock

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4,870

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Kulean Microsystems

USA . 3,298 parts In-Stock

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Corphita

USA . 1,486 parts In-Stock

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Problanco Electronics

Mexico . 530 parts In-Stock

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Corohmni

South Africa . 77 parts In-Stock

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UHIMA Technologies

Türkiye . 3 parts In-Stock

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Overview

Experience the superior quality and performance of the SB30-03P from Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable diodes and rectifiers that meet the highest standards. The SB30-03P is perfect for a variety of applications, offering a maximum output current of 3A and a maximum forward voltage of 0.55V. With advanced Schottky technology, this product provides efficient power management and protection. Trust Onsemi's SB30-03P to deliver exceptional value, benefits, and advantages for all your electronic needs.

Feature Benefit Bullets

Config: SINGLE

A single configuration makes installation and maintenance easier as there is only one component to deal with.

Surface Mount: YES

Surface mount capability allows for compact and efficient circuit board designs, saving space and reducing production costs.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product suitable for power supply applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop ensures minimal power loss and efficient operation of the circuit.

Maximum Output Current: 3 A

High output current capability allows for handling of heavy loads and reliable performance under various operating conditions.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low reverse leakage current, making this product ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a high reverse voltage rating, this diode can withstand voltage spikes and surges, ensuring durability and protection of the circuit.

Maximum Non Repetitive Peak Forward Current: 10 A

The diode's ability to handle high peak forward currents makes it reliable and rugged, suitable for demanding industrial applications.

Technical Specifications

Diodes & Rectifiers SB30-03P attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

Maximum Output Current:

3 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SB30-03P Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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