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RURD460S

Onsemi

RURD460S by Onsemi

RURD460S by Onsemi is a single rectifier diode with a max reverse recovery time of 0.06 us and a max output current of 4 A. It is designed for ultra-fast recovery power applications, featuring a package style of small outline and a max operating temperature of 175 °C.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Digiode

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Vyrian

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Sea View Technologies

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Bristol Electronics

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Beltway Electronics Company

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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A-Z Elektronik GmbH

Germany . 5,490 parts In-Stock

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Corphita

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Kulean Microsystems

USA . 2,589 parts In-Stock

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TANS Electronics

Latvia . 2,573 parts In-Stock

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UHIMA Technologies

Türkiye . 786 parts In-Stock

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Corohmni

South Africa . 332 parts In-Stock

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Overview

Unlock the power of ultra-fast recovery with the RURD460S diode by Onsemi. Designed for high-performance applications, this rectifier diode offers a winning combination of quality and reliability. Perfect for a wide range of uses, from power supplies to motor drives, this diode provides customers with exceptional value and peace of mind. Trust in Onsemi's reputation for excellence and experience the advantages of the RURD460S in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components.

Maximum Reverse Recovery Time: 0.06 us

Allows for fast switching and efficient operation.

Maximum Reverse Current: 100 uA

Ensures minimal leakage current for improved energy efficiency.

Reverse Test Voltage: 600 V

Suitable for high voltage applications.

No. of Terminals: 2

Simplified installation and connection.

Maximum Operating Temperature: 175 °C

Can operate in high temperature environments without damage.

Maximum Power Dissipation: 50 W

Ability to handle high power loads without overheating.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications.

Maximum Forward Voltage (VF): 1.5 V

Efficient forward conduction with low voltage drop.

Maximum Output Current: 4 A

Capable of handling moderate current loads.

Technical Specifications

Diodes & Rectifiers RURD460S attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

600 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

50 W

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.06 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

RURD460S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-458-2405, 5961014582405

NIIN

014582405

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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