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RURD620S9A

Onsemi

RURD620S9A by Onsemi

RURD620S9A by Onsemi is a single rectifier diode with ultra-fast soft recovery, featuring a max output current of 6A and max reverse recovery time of 0.03us. It operates in temperatures ranging from -65 °C to 175°C, making it suitable for high-power applications requiring fast switching capabilities.

Median Price

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Lifecycle Status

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6

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1k+

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Chip Stock

USA . 62,000 parts In-Stock

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Digiode

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Vyrian

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Bristol Electronics

USA . 2,290 parts In-Stock

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Atlantic Semiconductor

USA . 2,290 parts In-Stock

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PC Components Company LLC

USA . 493 parts In-Stock

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Andel Nordic

Denmark . 1,358 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 7,055 parts In-Stock

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TANS Electronics

Latvia . 6,086 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 3,107 parts In-Stock

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Supply Digital

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Corphita

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Problanco Electronics

Mexico . 1,607 parts In-Stock

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SupplyDigital Components

Austria . 1,031 parts In-Stock

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UHIMA Technologies

Türkiye . 819 parts In-Stock

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Corohmni

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Overview

Experience unparalleled efficiency and reliability with the RURD620S9A by Onsemi. As a leading manufacturer in the field of Diodes & Rectifiers, Onsemi is trusted for delivering high-quality components that exceed industry standards. The RURD620S9A is designed for applications requiring ultra-fast soft recovery, making it ideal for a wide range of uses. With a maximum power dissipation of 45 W and a maximum output current of 6 A, this rectifier diode offers unmatched performance and durability. Trust Onsemi to provide you with the best-in-class technology for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and reliable, ensuring the longevity of the product.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time ensures efficient operation and minimal energy loss.

Maximum Power Dissipation: 45 W

With a high power dissipation capacity, this product can handle large amounts of power without overheating.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop of 1V ensures minimal power loss and efficient operation.

Maximum Output Current: 6 A

Capable of handling high output currents, making it suitable for a wide range of applications.

Technology: AVALANCHE

The use of avalanche technology ensures reliable and stable performance under varying conditions.

Technical Specifications

Diodes & Rectifiers RURD620S9A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE

Application:

ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

45 W

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.03 us

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

RURD620S9A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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