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RURD620

Onsemi

RURD620 by Onsemi

RURD620 by Onsemi is a single rectifier diode with ultra-fast recovery time of 0.03 us and max output current of 6A. It operates in temperatures ranging from -65 to 175 °C, making it suitable for high-power applications requiring fast switching capabilities. The diode's avalanche technology and silicon nitride material ensure efficient power dissipation up to 45W in various electronic circuits.

Median Price

$0.864

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,017 parts In-Stock

1+ parts

-

100+ parts

$0.832

1k+ parts

$0.691

10k+ parts

$0.616

4,017

-

$0.832

$0.691

$0.616

DigiKey

USA . 4,017 parts In-Stock

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-

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$1.040

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4,017

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$1.040

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Verical

USA . 3,517 parts In-Stock

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$0.864

10k+ parts

$0.770

3,517

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$0.864

$0.770

Distributors (In-Stock)

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Vyrian

USA . 2,686 parts In-Stock

1+ parts

$0.563

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2,686

$0.563

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Digiode

USA . 784 parts In-Stock

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$0.649

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784

$0.649

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Chip Stock

USA . 18,000 parts In-Stock

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18,000

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ABC Electronics Ltd.

UK . 597 parts In-Stock

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597

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Electronic Expediters

USA . 28 parts In-Stock

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Corohmni

South Africa . 490 parts In-Stock

1+ parts

$0.563

100+ parts

-

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490

$0.563

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Corphita

USA . 1,108 parts In-Stock

1+ parts

$0.615

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1,108

$0.615

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Microchip USA

USA . 338 parts In-Stock

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$4.290

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338

$4.290

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,572 parts In-Stock

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TANS Electronics

Latvia . 5,548 parts In-Stock

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Continental Prestige Electronics

USA . 4,017 parts In-Stock

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$0.820

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$0.820

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Supply Digital

USA . 3,278 parts In-Stock

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Problanco Electronics

Mexico . 2,385 parts In-Stock

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SupplyDigital Components

Austria . 2,227 parts In-Stock

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Kulean Microsystems

USA . 2,021 parts In-Stock

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Glotronic Ltd.

UK . 1,013 parts In-Stock

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UHIMA Technologies

Türkiye . 81 parts In-Stock

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81

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Overview

Upgrade your power systems with the RURD620 by Onsemi, a top-of-the-line rectifier diode designed for ultra fast soft recovery power applications. With a maximum reverse recovery time of just 0.03 us and a maximum output current of 6 A, this diode offers unparalleled performance and efficiency. Manufactured by Onsemi, a trusted leader in the industry, you can count on the quality and reliability of this product. Say goodbye to slow recovery times and hello to seamless power management with the RURD620.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the diode lightweight and durable, suitable for various applications.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time allows for efficient power conversion and switching in high-speed circuits.

Maximum Reverse Current: 100 uA

The low reverse current ensures minimal power loss and improved efficiency in the circuit.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature tolerance of 175 °C allows for reliable performance in demanding environmental conditions.

Maximum Power Dissipation: 45 W

With a high maximum power dissipation capacity of 45 W, this diode can handle high power loads without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC power efficiently.

Maximum Output Current: 6 A

The high maximum output current of 6 A allows for the diode to handle large electrical loads with ease.

Technology: AVALANCHE

The use of avalanche technology in this diode enables it to withstand high voltage surges and transient events effectively.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high maximum repetitive peak reverse voltage rating of 200 V ensures the diode can handle reverse voltages without breakdown.

Diode Element Material: SILICON NITRIDE

The use of silicon nitride as the diode element material provides excellent thermal and electrical properties for reliable performance.

Technical Specifications

Diodes & Rectifiers RURD620 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE

Application:

ULTRA FAST SOFT RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON NITRIDE

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T2

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Power Dissipation:

45 W

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.03 us

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

RURD620 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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