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RURD660

Onsemi

RURD660 by Onsemi

RURD660 by Onsemi is a single rectifier diode with ultra-fast recovery time of 0.06 us and max output current of 6A. It operates b/w -65 to 175 °C, with a max power dissipation of 50W. Ideal for applications requiring high-speed switching and low reverse current requirements.

Median Price

$0.542

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 45 parts In-Stock

1+ parts

-

100+ parts

$0.542

1k+ parts

$0.450

10k+ parts

$0.401

45

-

$0.542

$0.450

$0.401

Distributors (In-Stock)

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Digiode

USA . 1,409 parts In-Stock

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$0.422

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$0.422

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Chip Stock

USA . 39,000 parts In-Stock

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39,000

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Electronic Expediters

USA . 34,100 parts In-Stock

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Vyrian

USA . 8,861 parts In-Stock

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8,861

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J2 Sourcing AB

Sweden . 700 parts In-Stock

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700

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ABC Electronics Ltd.

UK . 25 parts In-Stock

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25

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Martec Srl

Italy . 24 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,398 parts In-Stock

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$0.400

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2,398

$0.400

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Corohmni

South Africa . 407 parts In-Stock

1+ parts

$0.444

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407

$0.444

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,859 parts In-Stock

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Assy Fe

Spain . 13,670 parts In-Stock

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TANS Electronics

Latvia . 7,574 parts In-Stock

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Problanco Electronics

Mexico . 7,507 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,279 parts In-Stock

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Kulean Microsystems

USA . 5,031 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Supply Digital

USA . 2,040 parts In-Stock

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2,040

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UHIMA Technologies

Türkiye . 950 parts In-Stock

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950

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SupplyDigital Components

Austria . 49 parts In-Stock

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49

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Overview

Experience the unmatched quality and reliability of Onsemi with the RURD660 Diode & Rectifier. Designed for ultra-fast recovery, this product delivers exceptional performance in a variety of applications. From its single configuration to its high power dissipation capability, the RURD660 offers customers unparalleled value and benefits. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceed your expectations. Elevate your projects with the RURD660 and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material ensures durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.06 us

Ultra-fast reverse recovery time ensures efficient switching and performance.

Maximum Reverse Current: 100 uA

Low reverse current minimizes power loss and improves overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into different circuit designs.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability in extreme conditions.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop leads to lower power dissipation and improved efficiency.

Technical Specifications

Diodes & Rectifiers RURD660 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T2

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

50 W

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.06 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

RURD660 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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