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RURD460

Onsemi

RURD460 by Onsemi

RURD460 by Onsemi is a single rectifier diode with ultra-fast recovery power for applications requiring high-speed switching. It features a max reverse recovery time of 0.06 us, max forward voltage of 1.5 V, and can handle a max output current of 4 A. Ideal for use in circuits where fast response times are critical, this diode has a max operating temperature of 175 °C and package style is in-line.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,437 parts In-Stock

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Digiode

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ABC Electronics Ltd.

UK . 600 parts In-Stock

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SupplyDigital Components

Austria . 6,597 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,226 parts In-Stock

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Kulean Microsystems

USA . 4,199 parts In-Stock

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Supply Digital

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Corphita

USA . 676 parts In-Stock

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Problanco Electronics

Mexico . 465 parts In-Stock

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TANS Electronics

Latvia . 444 parts In-Stock

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Corohmni

South Africa . 410 parts In-Stock

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UHIMA Technologies

Türkiye . 134 parts In-Stock

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Overview

Experience the next level of power efficiency with the RURD460 by Onsemi. This ultra-fast recovery rectifier diode offers unparalleled quality and reliability, making it the perfect choice for a wide range of applications in the electronics industry. With a maximum output current of 4A and a maximum repetitive peak reverse voltage of 600V, this diode ensures optimal performance and longevity. Upgrade your projects with the RURD460 and enjoy the benefits of superior technology and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, suitable for various applications.

Maximum Reverse Recovery Time: 0.06 us

The ultra-fast reverse recovery time ensures efficient and quick switching, making it ideal for high-speed applications.

Maximum Reverse Current: 100 uA

Low reverse current ensures minimal power loss and high efficiency in operation.

Maximum Operating Temperature: 175 °C

The diode can operate at high temperatures without affecting its performance, making it suitable for harsh environments.

Maximum Power Dissipation: 50 W

With a high power dissipation capacity, this diode can handle high power loads without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it suitable for rectification applications.

Diode Element Material: SILICON

Silicon diodes have reliable performance and are widely used in electronics due to their high thermal stability.

Technical Specifications

Diodes & Rectifiers RURD460 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T2

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

50 W

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.06 us

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

RURD460 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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