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RURD660S9A-F085

Onsemi

RURD660S9A-F085 by Onsemi

RURD660S9A-F085 by Onsemi is a single rectifier diode with a max output current of 6A and max reverse recovery time of 0.083us. It operates in ultra-fast soft recovery power applications, with a max operating temperature of 175°C. The diode features avalanche technology and has a peak reflow temperature of 260°C.

Median Price

$0.400

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20,783 parts In-Stock

1+ parts

$0.430

100+ parts

$0.420

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$0.410

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20,783

$0.430

$0.420

$0.410

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Mouser Electronics

USA . 27,197 parts In-Stock

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$0.369

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$0.369

Adafruit Industries

USA . 30 parts In-Stock

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30

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Digiode

USA . 2,353 parts In-Stock

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$0.408

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$0.408

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Nova Conductors

Japan . 62 parts In-Stock

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$0.469

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$0.469

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Sensible Micro Corp

USA . 24,741 parts In-Stock

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Vyrian

USA . 15,832 parts In-Stock

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NAC Semi

USA . 7,500 parts In-Stock

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$0.508

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$0.508

Chip Stock

USA . 4,000 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,274 parts In-Stock

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$0.085

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$0.085

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Semicontronic

India . 31,588 parts In-Stock

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$0.314

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$0.306

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$0.305

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31,588

$0.314

$0.306

$0.305

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Ampacity Inc.

Singapore . 31,519 parts In-Stock

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$0.314

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$0.314

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Corohmni

South Africa . 86 parts In-Stock

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$0.369

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86

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Corphita

USA . 1,389 parts In-Stock

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$0.387

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1,389

$0.387

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Continental Prestige Electronics

USA . 8,483 parts In-Stock

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$0.469

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$0.459

8,483

$0.469

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$0.459

Argo Parts USA

USA . 5,195 parts In-Stock

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$0.469

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$0.455

5,195

$0.469

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$0.455

Netroflash

USA . 1,000 parts In-Stock

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$0.469

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$0.445

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$0.436

1,000

$0.469

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$0.445

$0.436

Bastille Electronics

Australia . 4,003 parts In-Stock

1+ parts

$0.469

100+ parts

$0.446

1k+ parts

$0.423

10k+ parts

$0.417

4,003

$0.469

$0.446

$0.423

$0.417

Component Stockers USA

USA . 634 parts In-Stock

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$99.990

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634

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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SupplyDigital Components

Austria . 7,501 parts In-Stock

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Kulean Microsystems

USA . 6,871 parts In-Stock

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Problanco Electronics

Mexico . 5,907 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 4,250 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,768 parts In-Stock

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Supply Digital

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Kepictronics

USA . 2,500 parts In-Stock

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Lixinc

USA . 2,293 parts In-Stock

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UHIMA Technologies

Türkiye . 898 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

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Overview

Experience unmatched power reliability with the RURD660S9A-F085 diode rectifier from Onsemi. Designed for ultra-fast soft recovery power applications, this high-quality component offers customers a dependable solution for their power needs. With a maximum output current of 6A and a maximum reverse recovery time of 0.083 microseconds, this diode ensures optimal performance in a variety of scenarios. Trust in Onsemi's reputation for excellence and choose the RURD660S9A-F085 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Reverse Recovery Time: 0.083 us

Ultra fast soft recovery time ensures quick and efficient operation.

Maximum Reverse Current: 100 uA

Low reverse current minimizes power loss and improves efficiency.

Maximum Operating Temperature: 175 °C

High operating temperature range allows for use in various environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, making it suitable for power applications.

Technology: AVALANCHE

Avalanche technology enhances the diode's ruggedness and reliability under high voltage conditions.

Technical Specifications

Diodes & Rectifiers RURD660S9A-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHELING DIODE

Application:

ULTRA FAST SOFT RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON NITRIDE

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.083 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

RURD660S9A-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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