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RURD660S9A

Onsemi

RURD660S9A by Onsemi

RURD660S9A by Onsemi is a single rectifier diode with ultra-fast soft recovery, featuring a max output current of 6A and max repetitive peak reverse voltage of 600V. This diode has a small outline package style and is designed for applications requiring high-speed switching capabilities at temperatures ranging from -65 °C to 175°C.

Median Price

$0.412

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 391 parts In-Stock

1+ parts

$0.591

100+ parts

$0.321

1k+ parts

$0.256

10k+ parts

$0.230

391

$0.591

$0.321

$0.256

$0.230

Avnet

USA . 77,500 parts In-Stock

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-

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$0.373

77,500

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$0.373

Rochester

USA . 2,080 parts In-Stock

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-

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$0.405

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$0.336

10k+ parts

$0.299

2,080

-

$0.405

$0.336

$0.299

Flip Electronics (Authorized)

USA . 1,750 parts In-Stock

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Verical

USA . 1,222 parts In-Stock

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$0.420

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$0.374

1,222

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$0.374

Distributors (In-Stock)

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Digiode

USA . 2,858 parts In-Stock

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$0.331

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$0.331

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Vyrian

USA . 540 parts In-Stock

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$0.348

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540

$0.348

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Bristol Electronics

USA . 737 parts In-Stock

1+ parts

$0.938

100+ parts

$0.347

1k+ parts

$0.263

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737

$0.938

$0.347

$0.263

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Chip Stock

USA . 21,500 parts In-Stock

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21,500

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ComSIT Distribution GmbH

Germany . 2,485 parts In-Stock

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ComSIT USA

USA . 2,485 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,199 parts In-Stock

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Flip Electronics

USA . 1,025 parts In-Stock

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Microfarads

USA . 966 parts In-Stock

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PC Components Company LLC

USA . 349 parts In-Stock

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349

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LIBRA Elektronik GmbH

Germany . 129 parts In-Stock

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129

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Distributors (Availability)

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Corphita

USA . 617 parts In-Stock

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$0.313

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617

$0.313

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Corohmni

South Africa . 208 parts In-Stock

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$0.348

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208

$0.348

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Continental Prestige Electronics

USA . 391 parts In-Stock

1+ parts

$0.591

100+ parts

$0.321

1k+ parts

$0.256

10k+ parts

-

391

$0.591

$0.321

$0.256

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Kepictronics

USA . 38,500 parts In-Stock

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Perfect Parts

USA . 27,528 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,889 parts In-Stock

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SupplyDigital Components

Austria . 5,163 parts In-Stock

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Microchip USA

USA . 4,625 parts In-Stock

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Assy Fe

Spain . 4,330 parts In-Stock

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Problanco Electronics

Mexico . 3,639 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Supply Digital

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Kulean Microsystems

USA . 1,943 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,199 parts In-Stock

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TANS Electronics

Latvia . 1,182 parts In-Stock

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Glotronic Ltd.

UK . 959 parts In-Stock

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959

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UHIMA Technologies

Türkiye . 399 parts In-Stock

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399

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Overview

Discover the RURD660S9A by Onsemi, a top-quality diode & rectifier that offers ultra-fast soft recovery for your electronic applications. With a maximum output current of 6A and a maximum repetitive peak reverse voltage of 600V, this product ensures reliable performance under extreme conditions. Manufactured by Onsemi, a trusted name in the industry, this diode promises exceptional quality and durability. Perfect for a wide range of applications, this small outline diode is designed to deliver outstanding results while maintaining a high level of efficiency. Upgrade your projects with the RURD660S9A and experience the value and benefits it brings to your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term reliability.

Config: SINGLE

Simplified design and installation with a single configuration.

Surface Mount: YES

Easy to mount on PCBs, saving space and allowing for efficient layout.

Maximum Reverse Recovery Time: 0.06 us

Ultra-fast recovery time ensures minimal loss and improved efficiency.

Package Shape: RECTANGULAR

Standard package shape for easy integration in various applications.

No. of Terminals: 2

Simplified connection with only 2 terminals.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Application: ULTRA FAST SOFT RECOVERY

Ideal for high-speed switching applications requiring fast recovery times.

Maximum Operating Temperature: 175 °C

Wide operating temperature range for versatile use in various environments.

Minimum Operating Temperature: -65 °C

Can withstand low temperatures, suitable for diverse operating conditions.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for enhanced longevity and performance.

Terminal Position: SINGLE

Simplified installation and connection with single terminal position.

Case Connection: CATHODE

Standard cathode connection for ease of circuit integration.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering during assembly process.

Peak Reflow Temperature °C: 260

High reflow temperature capability for reliable soldering.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications for improved electrical performance.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop for energy efficiency and reduced power losses.

Maximum Output Current: 6 A

High output current capability for various power applications.

Technology: AVALANCHE

Avalanche technology for enhanced reliability and robustness in demanding conditions.

Terminal Form: GULL WING

Gull wing terminal form for easy surface mounting and secure connection.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage rating for versatile use in different voltage applications.

Maximum Non Repetitive Peak Forward Current: 60 A

High forward current rating for handling transient overloads effectively.

Diode Element Material: SILICON

Silicon diode element material for efficient rectification and electrical performance.

Technical Specifications

Diodes & Rectifiers RURD660S9A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

RURD660S9A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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