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QVA11223

Onsemi

QVA11223 by Onsemi

The Onsemi QVA11223 is a SINGLE Transistor Outputs Slotted Switch with 0.05A Forward Current. It operates b/w -40 to 85 °C, with a Dark Current of 100000nA and Slot Width of 3.18mm. Ideal for applications requiring precise optoelectronic switching in through-hole mounting setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,258 parts In-Stock

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Digiode

USA . 1,213 parts In-Stock

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SupplyDigital Components

Austria . 7,269 parts In-Stock

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Problanco Electronics

Mexico . 4,806 parts In-Stock

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TANS Electronics

Latvia . 3,527 parts In-Stock

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Corphita

USA . 2,239 parts In-Stock

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Kulean Microsystems

USA . 1,687 parts In-Stock

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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789

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Supply Digital

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Corohmni

South Africa . 268 parts In-Stock

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Overview

Discover the Onsemi QVA11223, a high-quality transistor output slotted switch that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed for a wide range of applications, from industrial automation to consumer electronics. With a maximum forward current of 0.05A and a wide operating temperature range, the QVA11223 ensures optimal functionality in any environment. Experience seamless integration with its through-hole mounting feature and precise gap size of 3.18mm. Invest in the QVA11223 today and elevate your projects with superior quality and efficiency.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to install and use, simplifying the setup process.

Maximum Forward Current: 0.05 A

The high maximum forward current allows the device to handle a range of applications without overheating or malfunctioning.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

Being a transistor output slotted switch, this product provides efficient and reliable switching for various electronic circuits.

Output Circuit Type: Transistor

The use of a transistor in the output circuit ensures fast and accurate switching, contributing to the overall performance of the device.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand tough environmental conditions and extended use.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the device to function effectively even in colder environments.

Maximum Dark Current: 100000 nA

The low maximum dark current helps in minimizing power consumption and ensuring efficient operation of the device.

Nominal Slot Width: 3.18 mm

The precise slot width ensures accurate detection and switching capabilities, making this product reliable in various applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design makes it easy to securely install the device on a PCB, ensuring stability and reliability.

Gap Size: 3.18 mm

The gap size of 3.18 mm allows for efficient detection of objects passing through, enhancing the overall performance of the device.

Technical Specifications

Transistor Outputs Slotted Switch QVA11223 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

100000 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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