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QVA11324

Onsemi

QVA11324 by Onsemi

The Onsemi QVA11324 is a SINGLE Transistor Output Slotted Switch with 0.05A Forward Current. It operates b/w -40 °C to 85°C, has a 30V Breakdown Voltage, and 3.18mm Gap Size. Ideal for applications requiring precise switching in optoelectronic systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 46,000 parts In-Stock

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Digiode

USA . 2,556 parts In-Stock

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Vyrian

USA . 713 parts In-Stock

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Problanco Electronics

Mexico . 7,685 parts In-Stock

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SupplyDigital Components

Austria . 7,040 parts In-Stock

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Kulean Microsystems

USA . 6,585 parts In-Stock

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TANS Electronics

Latvia . 6,571 parts In-Stock

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Corphita

USA . 1,927 parts In-Stock

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Supply Digital

USA . 1,635 parts In-Stock

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Corohmni

South Africa . 445 parts In-Stock

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UHIMA Technologies

Türkiye . 37 parts In-Stock

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Overview

Unlock the power of precision with the QVA11324 by Onsemi. Crafted with superior quality and reliability, Onsemi brings you a Transistor Outputs Slotted Switch that exceeds industry standards. Ideal for a wide range of applications, this single configuration device offers seamless performance in various environments. Experience peace of mind knowing that your operations are in good hands with the QVA11324, providing unmatched value and efficiency to customers. Choose Onsemi for unparalleled advantages and elevate your projects to new heights.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration simplifies the setup process and reduces the chances of errors during installation.

Maximum Forward Current: 0.05 A

The high maximum forward current capacity allows for reliable operation even under heavy load conditions.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

Being an optoelectronic type ensures efficient conversion of electrical signals to optical signals, making it suitable for applications that require precise switching.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without compromising performance, ensuring reliability in various environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable performance even in cold environments, making this product suitable for a wide range of applications.

Maximum Dark Current: 100 nA

The low maximum dark current ensures minimal current leakage when the switch is in the off state, contributing to energy efficiency and reducing the risk of overheating.

Nominal Slot Width: 3.18 mm

The specific slot width provides optimized performance and compatibility with components of similar dimensions, ensuring a precise fit and reliable operation.

Minimum Collector-emitter Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this product offers robust protection against voltage surges, enhancing overall durability and safety.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure attachment to circuit boards, reducing the risk of disconnection or malfunction.

Gap Size: 3.18 mm

The specific gap size provides precise alignment and optimal performance, ensuring consistent and reliable switching functionality.

Technical Specifications

Transistor Outputs Slotted Switch QVA11324 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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