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QVA11334

Onsemi

QVA11334 by Onsemi

Onsemi's QVA11334 is a SINGLE Transistor Outputs Slotted Switch with 0.05A Forward Current. It operates b/w -40 to 85 °C, with 100000nA Dark Current and 3.18mm Gap Width. Ideal for applications requiring precise optoelectronic sensing in industrial automation and robotics systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 75,000 parts In-Stock

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Vyrian

USA . 1,132 parts In-Stock

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Digiode

USA . 633 parts In-Stock

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633

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Problanco Electronics

Mexico . 7,124 parts In-Stock

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SupplyDigital Components

Austria . 6,625 parts In-Stock

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TANS Electronics

Latvia . 5,388 parts In-Stock

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Supply Digital

USA . 1,452 parts In-Stock

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Kulean Microsystems

USA . 1,035 parts In-Stock

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UHIMA Technologies

Türkiye . 914 parts In-Stock

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Corphita

USA . 600 parts In-Stock

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Corohmni

South Africa . 188 parts In-Stock

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Overview

Experience the superior quality and reliability of the QVA11334 by Onsemi, a leading manufacturer in the industry. This transistor output slotted switch offers unmatched performance and versatility for a wide range of applications. From industrial automation to consumer electronics, this product provides exceptional value with its high efficiency and precision. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Upgrade your systems with the QVA11334 and enjoy the benefits of top-notch quality and performance.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to install and use in various applications without the need for complex wiring configurations.

Maximum Forward Current: 0.05 A

The high maximum forward current allows for reliable and efficient operation in demanding applications.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

This type ensures precise and accurate switching functionality for optimal performance.

Output Circuit Type: Transistor

Transistor output provides fast response times and low power consumption for efficiency.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this slotted switch can withstand harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for operation in cold environments without issues.

Maximum Dark Current: 100000 nA

Low dark current ensures accurate detection and avoids false triggering.

Nominal Slot Width: 3.18 mm

The specific slot width provides precise alignment and reliable detection capabilities.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature enables secure and stable installation in various applications.

Gap Size: 3.18 mm

The gap size ensures proper alignment and accurate detection for reliable operation.

Technical Specifications

Transistor Outputs Slotted Switch QVA11334 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

100000 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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