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QVA11333

Onsemi

QVA11333 by Onsemi

QVA11333 by Onsemi is a SINGLE Transistor Outputs Slotted Switch with 0.05A Forward Current. It operates b/w -40 to 85 °C, has 30V Breakdown Voltage, and 100nA Dark Current. Ideal for applications requiring precise slot detection in industrial automation systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,329 parts In-Stock

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Vyrian

USA . 1,115 parts In-Stock

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SupplyDigital Components

Austria . 5,700 parts In-Stock

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Problanco Electronics

Mexico . 4,002 parts In-Stock

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Kulean Microsystems

USA . 3,774 parts In-Stock

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TANS Electronics

Latvia . 3,497 parts In-Stock

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Supply Digital

USA . 2,653 parts In-Stock

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Corphita

USA . 2,093 parts In-Stock

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Corohmni

South Africa . 431 parts In-Stock

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UHIMA Technologies

Türkiye . 142 parts In-Stock

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Overview

Discover the unmatched reliability and precision of the QVA11333 by Onsemi, a leading manufacturer in the industry. As a top-of-the-line Transistor Outputs Slotted Switch, this product offers unparalleled performance and durability. Ideal for a wide range of applications, this single configuration switch is designed to provide maximum forward current and operate seamlessly in temperatures ranging from -40 °C to 85°C. Experience the value and benefits of choosing Onsemi for your optoelectronic needs with the QVA11333.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration simplifies installation and setup, making it user-friendly.

Maximum Forward Current: 0.05 A

With a maximum forward current of 0.05 A, this product can handle a decent amount of current, making it suitable for various applications.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

Being an optoelectronic type transistor output slotted switch ensures reliable operation and efficient performance.

Minimum Operating Temperature: -40 °C

Capable of operating at temperatures as low as -40 °C, this product is ideal for use in extreme environments.

Maximum Dark Current: 100 nA

Having a maximum dark current of 100 nA ensures minimal leakage current, resulting in accurate and reliable performance.

Nominal Slot Width: 3.18 mm

With a nominal slot width of 3.18 mm, this product provides precise detection capabilities, enhancing its functionality.

Minimum Collector-emitter Breakdown Voltage: 30 V

The minimum collector-emitter breakdown voltage of 30 V offers protection against electrical failures, ensuring long-term durability.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes it easy to securely install the product, preventing displacement during operation.

Gap Size: 3.18 mm

With a gap size of 3.18 mm, this product provides accurate detection and alignment capabilities, improving overall performance.

Technical Specifications

Transistor Outputs Slotted Switch QVA11333 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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