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QVA11123

Onsemi

QVA11123 by Onsemi

The Onsemi QVA11123 is a SINGLE Transistor Outputs Slotted Switch with 0.05A Max Forward Current, 30V Min Collector-emitter Breakdown Voltage, and 85 °C Max Operating Temp. Ideal for applications requiring precise slot detection in industrial machinery due to its 3.18mm Nominal Slot Width and Through Hole Mounting Feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,321 parts In-Stock

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Vyrian

USA . 1,124 parts In-Stock

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Metaverse IC Inc.

Canada . 8,999 parts In-Stock

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Kepictronics

USA . 6,999 parts In-Stock

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Problanco Electronics

Mexico . 5,837 parts In-Stock

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TANS Electronics

Latvia . 5,445 parts In-Stock

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Corphita

USA . 2,801 parts In-Stock

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Kulean Microsystems

USA . 2,134 parts In-Stock

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SupplyDigital Components

Austria . 1,903 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 577 parts In-Stock

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Corohmni

South Africa . 67 parts In-Stock

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Overview

Elevate your projects with the QVA11123 by Onsemi, a high-quality Transistor Outputs Slotted Switch that offers reliable performance and precision. Manufactured by Onsemi, a trusted name in the industry, this product ensures durability and efficiency in every application. Whether you're in automation, robotics, or industrial control, this single configuration switch provides a maximum forward current of 0.05 A and a minimum collector-emitter breakdown voltage of 30 V, making it a versatile and valuable addition to your toolkit. Experience seamless operation and superior results with the QVA11123 from Onsemi.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to install and use in various applications without the need for complex setups.

Maximum Forward Current: 0.05 A

The high maximum forward current ensures reliable performance even in high current applications.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

This type ensures efficient switching and control capability in optoelectronic applications.

Output Circuit Type: Transistor

Transistor output circuit provides a reliable and stable output signal for consistent performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without compromising functionality.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable operation even in cold environments.

Maximum Dark Current: 100 nA

Low maximum dark current ensures minimal power consumption and accurate switching performance.

Nominal Slot Width: 3.18 mm

The specific slot width provides precise slot detection for accurate control and monitoring.

Minimum Collector-emitter Breakdown Voltage: 30 V

High minimum collector-emitter breakdown voltage offers protection against voltage spikes and ensures long-term reliability.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies installation and ensures secure attachment to circuit boards.

Gap Size: 3.18 mm

The specific gap size ensures accurate slot detection and reliable switching performance.

Technical Specifications

Transistor Outputs Slotted Switch QVA11123 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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