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QVA11124

Onsemi

QVA11124 by Onsemi

The Onsemi QVA11124 is a SINGLE Transistor Outputs Slotted Switch with 0.05A Forward Current. Featuring 3.18mm Nominal Slot Width and Gap Size, it operates b/w -40 °C to 85°C. Ideal for applications requiring optoelectronic TRANSISTOR OUTPUT SLOTTED SWITCH in THROUGH HOLE MOUNT configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,264 parts In-Stock

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Digiode

USA . 1,910 parts In-Stock

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1,910

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Distributors (Availability)

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Kulean Microsystems

USA . 7,352 parts In-Stock

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7,352

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Problanco Electronics

Mexico . 6,716 parts In-Stock

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Supply Digital

USA . 2,120 parts In-Stock

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SupplyDigital Components

Austria . 1,609 parts In-Stock

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Corphita

USA . 1,424 parts In-Stock

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UHIMA Technologies

Türkiye . 775 parts In-Stock

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775

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TANS Electronics

Latvia . 227 parts In-Stock

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Corohmni

South Africa . 201 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the QVA11124 by Onsemi. This high-quality transistor output slotted switch offers unparalleled performance and reliability, backed by a trusted manufacturer known for their cutting-edge technology. Ideal for a range of applications, this product provides customers with value and benefits that will elevate their projects to the next level. Experience the advantage of seamless operation, precise control, and superior quality with the QVA11124. Trust Onsemi to deliver excellence in every component.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies installation and maintenance, making it a user-friendly choice.

Maximum Forward Current: 0.05 A

With a high maximum forward current, this product can handle various applications with ease.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

Optoelectronic type ensures reliable and efficient performance in controlling circuit signals.

Output Circuit Type: Transistor

Transistor output circuit provides fast response times and accurate switching capabilities.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for use in a wide range of environments without compromising performance.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable operation even in extreme cold conditions.

Maximum Dark Current: 100000 nA

Low maximum dark current minimizes power consumption and enhances overall efficiency.

Nominal Slot Width: 3.18 mm

Standard slot width allows for compatibility with various mounting setups and configurations.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature offers secure installation and stability in a variety of applications.

Gap Size: 3.18 mm

Optimal gap size ensures reliable operation and accurate detection in the sensing application.

Technical Specifications

Transistor Outputs Slotted Switch QVA11124 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

100000 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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