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QVE00039

Onsemi

QVE00039 by Onsemi

QVE00039 by Onsemi is a Transistor Outputs Slotted Switch with 0.5 mA On State Collector Current, 0.05 A Forward Current, and 30 V Breakdown Voltage. It operates b/w -40 to 85 °C and has a Slot Width of 2.41 mm. Ideal for applications requiring precise switching in optoelectronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,659 parts In-Stock

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Digiode

USA . 1,658 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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Kulean Microsystems

USA . 4,834 parts In-Stock

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Problanco Electronics

Mexico . 4,384 parts In-Stock

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TANS Electronics

Latvia . 4,365 parts In-Stock

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Corphita

USA . 3,164 parts In-Stock

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SupplyDigital Components

Austria . 1,184 parts In-Stock

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UHIMA Technologies

Türkiye . 719 parts In-Stock

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Corohmni

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Supply Digital

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Overview

Discover the QVE00039 by Onsemi, a top-notch Transistor Outputs Slotted Switch designed for precision and reliability. Manufactured by industry leader Onsemi, this product offers unparalleled quality and performance. Ideal for a wide range of applications, this product provides customers with exceptional value and benefits, including precise control and reliable operation. Upgrade your systems with the QVE00039 and experience the advantages it brings to your projects.

Feature Benefit Bullets

Nominal On State Collector Current: 0.5 mA

The high nominal on-state collector current of 0.5 mA ensures reliable performance and efficient operation of the device.

Configuration: SINGLE

The single configuration simplifies installation and maintenance, making it a convenient choice for various applications.

Maximum Forward Current: 0.05 A

The high maximum forward current of 0.05 A allows for handling higher loads, increasing the versatility of the device.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

Being a transistor output slotted switch, this product offers reliable switching capabilities and precise control for different tasks.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can withstand high temperatures, ensuring consistent performance in harsh environments.

Minimum Operating Temperature: -40 °C

The wide range of minimum operating temperature (-40 °C) makes this product suitable for use in both extreme cold and hot conditions.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides excellent conductivity and corrosion resistance, enhancing the durability and longevity of the product.

Nominal Slot Width: 2.41 mm

The precise nominal slot width of 2.41 mm ensures accurate alignment and detection, making this product suitable for precise sensing applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

The high minimum collector-emitter breakdown voltage of 30 V offers protection against voltage spikes, ensuring the safety of connected components.

Gap Size: 2.41 mm

The standardized gap size of 2.41 mm ensures proper installation and compatibility with various mounting configurations, simplifying integration into different systems.

Technical Specifications

Transistor Outputs Slotted Switch QVE00039 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Gap Size:

2.41 mm

JESD-609 Code:

e3

No. of Functions:

1

Nominal On State Collector Current:

.5 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

2.41 mm

Terminal Finish:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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