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QVE00033

Onsemi

QVE00033 by Onsemi

QVE00033 by Onsemi is a SINGLE transistor output slotted switch with 0.1 mA nominal on state collector current, 0.05 A max forward current, and 30 V min collector-emitter breakdown voltage. It operates b/w -55 to 100 °C and has a response time of 0.00015 s. Ideal for applications requiring open collector output circuit type in surface mount configurations.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,134 parts In-Stock

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Digiode

USA . 2,267 parts In-Stock

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Component Stockers USA

USA . 296 parts In-Stock

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$99.990

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Kepictronics

USA . 20,000 parts In-Stock

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SIE Connect GmbH (Excess)

Germany . 15,579 parts In-Stock

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TANS Electronics

Latvia . 6,332 parts In-Stock

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Problanco Electronics

Mexico . 6,005 parts In-Stock

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Kulean Microsystems

USA . 2,570 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 2,180 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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Corohmni

South Africa . 401 parts In-Stock

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UHIMA Technologies

Türkiye . 262 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the QVE00033 by Onsemi. Manufactured by a trusted industry leader, this transistor outputs slotted switch offers reliable operation and precise control. Ideal for a variety of applications, this product ensures smooth functionality and seamless integration. With its superior quality and advanced design, the QVE00033 provides unmatched value and efficiency for customers seeking top-notch performance in their projects. Elevate your technology and experience the benefits of this innovative solution today.

Feature Benefit Bullets

Nominal On State Collector Current: 0.1 mA

Low current consumption allows for energy efficiency and longer operational life.

Configuration: SINGLE

Simple and straightforward configuration for easy installation and operation.

Maximum Forward Current: 0.05 A

Capability to handle moderate current levels safely and reliably.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

Specifically designed for optoelectronic applications requiring precise switching control.

Output Circuit Type: Open Collector

Open collector output allows for easy interface with external circuitry for flexibility in use.

Maximum Operating Temperature: 100 °C

Can operate efficiently in a wide range of temperature environments.

Minimum Operating Temperature: -55 °C

Ability to function reliably in extreme cold conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good solderability and corrosion resistance for long-term performance.

Maximum Dark Current: 100 nA

Low dark current ensures minimal leakage current when switch is off.

Maximum Response Time: 0.00015 s

Ultra-fast response time for quick and precise switching operations.

Nominal Slot Width: 2 mm

Standard slot width for compatibility with various applications and mounting options.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage provides protection against voltage spikes and surges.

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy and secure installation on circuit boards.

Gap Size: 2 mm

Optimal gap size for accurate slot sensing and reliable switching performance.

Maximum On State Current: 0.0006 A

Able to handle peak current demands safely without compromising performance.

Technical Specifications

Transistor Outputs Slotted Switch QVE00033 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Gap Size:

2 mm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.0006 A

Nominal On State Collector Current:

.1 mA

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Output Circuit Type:

Open Collector

Maximum Response Time:

.00015 s

Nominal Slot Width:

2 mm

Terminal Finish:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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