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QVA21213

Onsemi

QVA21213 by Onsemi

The Onsemi QVA21213 is a SINGLE Transistor Outputs Slotted Switch with 0.05A Forward Current. It operates b/w -40 to 85 °C, with a Dark Current of 100000nA. Ideal for applications requiring precise slot detection in industrial automation systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,777 parts In-Stock

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Digiode

USA . 347 parts In-Stock

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Elcom Components

USA . 99 parts In-Stock

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Kulean Microsystems

USA . 7,972 parts In-Stock

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SupplyDigital Components

Austria . 4,249 parts In-Stock

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Problanco Electronics

Mexico . 1,696 parts In-Stock

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TANS Electronics

Latvia . 1,496 parts In-Stock

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Corphita

USA . 1,266 parts In-Stock

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Corohmni

South Africa . 339 parts In-Stock

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Supply Digital

USA . 134 parts In-Stock

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UHIMA Technologies

Türkiye . 86 parts In-Stock

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Overview

Experience the superior quality and reliability of the QVA21213 by Onsemi, a leading manufacturer in the industry. This transistor output slotted switch offers unparalleled performance and precision in a wide range of applications. From industrial automation to security systems, this product provides customers with unmatched value and benefits, ensuring seamless operation and peace of mind. Trust Onsemi for cutting-edge technology and exceptional results.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies installation and maintenance of the switch.

Maximum Forward Current: 0.05 A

Capable of handling high forward current, suitable for various applications.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

Transistor output ensures reliable switching performance.

Output Circuit Type: Transistor

Transistor output circuit provides stability and efficiency in operation.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environments.

Minimum Operating Temperature: -40 °C

Suitable for cold temperature applications.

Maximum Dark Current: 100000 nA

Low dark current ensures minimal power consumption when not in use.

Nominal Slot Width: 3.18 mm

Standard slot width for compatibility with commonly used components.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable installation.

Gap Size: 3.18 mm

Standard gap size for accurate sensing and switching operations.

Technical Specifications

Transistor Outputs Slotted Switch QVA21213 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

100000 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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