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QVA21113

Onsemi

QVA21113 by Onsemi

QVA21113 by Onsemi is a SINGLE Transistor Outputs Slotted Switch with 0.05A Forward Current, 30V Breakdown Voltage, and 85 °C Max Temp. Ideal for applications requiring precise slot detection in industrial automation systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,075 parts In-Stock

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Digiode

USA . 2,174 parts In-Stock

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SupplyDigital Components

Austria . 7,620 parts In-Stock

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Problanco Electronics

Mexico . 5,044 parts In-Stock

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Kulean Microsystems

USA . 4,335 parts In-Stock

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TANS Electronics

Latvia . 3,692 parts In-Stock

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Corphita

USA . 1,616 parts In-Stock

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UHIMA Technologies

Türkiye . 695 parts In-Stock

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695

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Supply Digital

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Corohmni

South Africa . 205 parts In-Stock

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Overview

Unleash the power of precision with the QVA21113 by Onsemi. Manufactured by a trusted industry leader, this Transistor Outputs Slotted Switch offers unparalleled quality and reliability. From its single configuration to its maximum forward current of 0.05 A, this product is designed to exceed expectations in optoelectronic applications. With a wide operating temperature range and minimal dark current, the QVA21113 is the perfect choice for high-performance systems. Elevate your projects with the superior value and benefits of Onsemi's QVA21113.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy installation and simple wiring, making it user-friendly.

Maximum Forward Current: 0.05 A

With a maximum forward current of 0.05 A, this slotted switch is suitable for low power applications.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

The optoelectronic nature of this slotted switch provides accurate and reliable sensing capabilities.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance in various conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C makes this slotted switch suitable for a wide range of environments.

Maximum Dark Current: 100 nA

The low maximum dark current of 100 nA ensures minimal power consumption when the switch is not active.

Nominal Slot Width: 3.18 mm

The 3.18 mm slot width provides precise sensing and detection capabilities.

Minimum Collector-emitter Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this slotted switch offers reliable protection against voltage spikes.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process and ensures secure attachment.

Gap Size: 3.18 mm

The 3.18 mm gap size provides accurate sensing and reliable operation for this slotted switch.

Technical Specifications

Transistor Outputs Slotted Switch QVA21113 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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