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QVA21314

Onsemi

QVA21314 by Onsemi

The Onsemi QVA21314 is a SINGLE Transistor Outputs Slotted Switch with 0.05A Forward Current. Featuring a 3.18mm Nominal Slot Width and Gap Size, it operates b/w -40 °C to 85°C. Ideal for applications requiring precise optoelectronic sensing in industrial automation and robotics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,926 parts In-Stock

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Vyrian

USA . 427 parts In-Stock

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SupplyDigital Components

Austria . 3,396 parts In-Stock

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TANS Electronics

Latvia . 2,854 parts In-Stock

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Supply Digital

USA . 2,164 parts In-Stock

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Problanco Electronics

Mexico . 1,511 parts In-Stock

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Kulean Microsystems

USA . 1,282 parts In-Stock

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Corphita

USA . 842 parts In-Stock

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Corohmni

South Africa . 326 parts In-Stock

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UHIMA Technologies

Türkiye . 315 parts In-Stock

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Overview

Experience the unmatched quality and reliability of the QVA21314 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers products that exceed expectations. The QVA21314 falls under the Transistor Outputs Slotted Switch category, offering a single configuration with a maximum forward current of 0.05 A. From industrial automation to security systems, this versatile product is perfect for a wide range of applications. Trust the QVA21314 to provide value, benefits, and advantages that will enhance your projects and ensure top-notch performance.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various systems without the need for complicated wiring or setup.

Maximum Forward Current: 0.05 A

With a maximum forward current of 0.05 A, this product can handle moderate power requirements effectively.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

The optoelectronic type ensures reliable switching performance and accuracy in detecting objects within the slot.

Output Circuit Type: Transistor

The transistor output circuit provides fast response times and low power consumption, making it suitable for various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can withstand high temperatures, making it suitable for industrial environments.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40 to 85 °C ensures reliable performance even in extreme cold conditions.

Maximum Dark Current: 100000 nA

The low maximum dark current of 100000 nA ensures minimal signal interference and accurate detection of objects.

Nominal Slot Width: 3.18 mm

The 3.18 mm nominal slot width provides a precise detection range for objects passing through the slot, ensuring high reliability.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy installation and secure placement of the slotted switch in various applications.

Gap Size: 3.18 mm

The gap size of 3.18 mm ensures reliable detection of objects passing through the slot, making it suitable for a wide range of applications.

Technical Specifications

Transistor Outputs Slotted Switch QVA21314 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

100000 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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