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QVA21214

Onsemi

QVA21214 by Onsemi

QVA21214 by Onsemi is a SINGLE Transistor Outputs Slotted Switch with 0.05A Forward Current, 30V Breakdown Voltage, and 85 °C Max Temp. Ideal for applications requiring precise slot width detection in industrial automation systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,016 parts In-Stock

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Digiode

USA . 2,031 parts In-Stock

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Elcom Components

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Aztec Data Supply Inc.

USA . 10 parts In-Stock

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$0.735

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Problanco Electronics

Mexico . 2,473 parts In-Stock

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SupplyDigital Components

Austria . 2,365 parts In-Stock

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Corphita

USA . 2,142 parts In-Stock

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Kulean Microsystems

USA . 1,902 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 485 parts In-Stock

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UHIMA Technologies

Türkiye . 185 parts In-Stock

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TANS Electronics

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Overview

Enhance your product performance with the QVA21214 by Onsemi. This high-quality transistor output slotted switch offers reliability and precision for a wide range of applications. Manufactured by Onsemi, a trusted name in the industry, this single configuration device ensures maximum forward current of 0.05A and operates efficiently in temperatures ranging from -40 to 85 °C. With a nominal slot width of 3.18mm and a minimum collector-emitter breakdown voltage of 30V, the QVA21214 provides superior functionality and value to customers seeking top-notch optoelectronic components. Elevate your projects with the exceptional benefits and advantages this product has to offer.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies installation and operation of the slotted switch.

Maximum Forward Current: 0.05 A

Suitable for low power applications, ensuring safe and efficient operation.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

Combines the benefits of a transistor output with the functionality of a slotted switch, offering versatility.

Output Circuit Type: Transistor

Utilizes a transistor output circuit for reliable switching and control.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for a variety of environments.

Minimum Operating Temperature: -40 °C

Can operate in extremely cold conditions, enhancing its applicability.

Maximum Dark Current: 100 nA

Low dark current ensures minimal power consumption when the switch is not in use.

Nominal Slot Width: 3.18 mm

Standard slot width for compatibility with a wide range of applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

Provides a high breakdown voltage for reliable operation and protection against voltage surges.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting option offers secure and stable installation.

Gap Size: 3.18 mm

Standard gap size for precise detection and switching capability.

Technical Specifications

Transistor Outputs Slotted Switch QVA21214 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Gap Size:

3.18 mm

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.18 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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