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NUP4201MR6T1

Onsemi

NUP4201MR6T1 by Onsemi

NUP4201MR6T1 by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 500W peak power dissipation, 6V breakdown voltage, and 12V clamping voltage. It is used for transient suppression in electronic circuits.

Median Price

$2.310

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 5 parts In-Stock

1+ parts

$2.310

100+ parts

$1.730

1k+ parts

$1.500

10k+ parts

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5

$2.310

$1.730

$1.500

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Chip Stock

USA . 9,740 parts In-Stock

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Vyrian

USA . 4,893 parts In-Stock

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4,893

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Digiode

USA . 2,211 parts In-Stock

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2,211

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Prism Electronics

USA . 199 parts In-Stock

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199

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 405 parts In-Stock

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$2.310

100+ parts

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405

$2.310

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AZTECH Wire

Italy . 1,162 parts In-Stock

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$10.530

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1,162

$10.530

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Kulean Microsystems

USA . 8,197 parts In-Stock

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8,197

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TANS Electronics

Latvia . 7,712 parts In-Stock

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Problanco Electronics

Mexico . 5,315 parts In-Stock

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5,315

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S.R.D Solutions

India . 2,888 parts In-Stock

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SupplyDigital Components

Austria . 2,285 parts In-Stock

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2,285

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A-Z Elektronik GmbH

Germany . 1,941 parts In-Stock

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1,941

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Assy Fe

Spain . 1,366 parts In-Stock

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Kepictronics

USA . 500 parts In-Stock

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500

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Corphita

USA . 466 parts In-Stock

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466

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UHIMA Technologies

Türkiye . 446 parts In-Stock

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446

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Perfect Parts

USA . 223 parts In-Stock

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Overview

Enhance your electronic devices with the NUP4201MR6T1 by Onsemi, a top-tier manufacturer known for its superior quality and reliability. As a Transient Suppression Device, this product offers unparalleled protection against voltage spikes, ensuring the longevity and performance of your equipment. Whether used in consumer electronics, automotive applications, or industrial machinery, this single-configured device provides a cost-effective solution that delivers maximum value and peace of mind to customers. Trust Onsemi to safeguard your investments with cutting-edge technology and innovative design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the product reliable for long-term use.

Surface Mount: YES

Allows for easy installation and integration into circuit boards, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capability provides protection against sudden voltage spikes and surges, ensuring the safety of connected components.

Nominal Breakdown Voltage: 6 V

With a breakdown voltage of 6 V, this product effectively suppresses voltage spikes above this threshold, safeguarding sensitive electronics.

No. of Terminals: 6

Having 6 terminals allows for secure connections and efficient signal transmission within the circuit.

Maximum Clamping Voltage: 12 V

The maximum clamping voltage of 12 V ensures that the protected circuit is not exposed to excessive voltages, enhancing overall system reliability.

Technical Specifications

Transient Suppression Devices NUP4201MR6T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6 V

Maximum Clamping Voltage:

12 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

NUP4201MR6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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