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NUP4201DR2

Onsemi

NUP4201DR2 by Onsemi

NUP4201DR2 by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 500W peak power dissipation and 12V clamping voltage. It has a 6V breakdown voltage, suitable for transient suppression applications. This device comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$3.850

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 114 parts In-Stock

1+ parts

$3.850

100+ parts

$2.880

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$2.500

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114

$3.850

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$2.500

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Chip Stock

USA . 17,000 parts In-Stock

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Vyrian

USA . 4,073 parts In-Stock

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Digiode

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Greenchips

USA . 1,362 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 1,362 parts In-Stock

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Rebound Electronics

UK . 224 parts In-Stock

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EMSNET

USA . 163 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 160 parts In-Stock

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Semi Source

USA . 104 parts In-Stock

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Goldney Electronics S.L.

Spain . 75 parts In-Stock

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Prism Electronics

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Corohmni

South Africa . 100 parts In-Stock

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$3.850

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100

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AZTECH Wire

Italy . 588 parts In-Stock

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$9.910

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588

$9.910

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Component Stockers USA

USA . 537 parts In-Stock

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$99.990

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537

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Kulean Microsystems

USA . 3,446 parts In-Stock

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Problanco Electronics

Mexico . 2,748 parts In-Stock

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TANS Electronics

Latvia . 2,527 parts In-Stock

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SupplyDigital Components

Austria . 2,478 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 221 parts In-Stock

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Corphita

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Glotronic Ltd.

UK . 128 parts In-Stock

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Overview

Enhance your electronics with the NUP4201DR2 by Onsemi, a top-tier manufacturer renowned for its high-quality Transient Suppression Devices. This single-configured device boasts a maximum non-repetitive peak reverse power dissipation of 500W and a nominal breakdown voltage of 6V, making it ideal for a range of applications. With its advanced technology and reliable performance, this product offers customers unparalleled value, benefits, and advantages in protecting their circuits from voltage spikes. Trust Onsemi to deliver excellence in every package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to heat and chemicals, making the product reliable in various environments.

Config: SINGLE

SINGLE configuration simplifies installation and maintenance, reducing potential points of failure in the system.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and facilitating automated manufacturing processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capability ensures protection against transient voltage spikes without damage to the device.

Nominal Breakdown Voltage: 6 V

The specific breakdown voltage value indicates the level at which the device starts conducting, providing targeted protection for sensitive components.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on a circuit board and easy placement during assembly.

No. of Terminals: 8

Having multiple terminals provides flexibility in connection options and ensures secure attachment to a circuit.

Package Style (Meter): SMALL OUTLINE

Small outline packaging saves space on the circuit board and simplifies placement in compact electronic devices.

Terminal Finish: Tin/Lead (Sn80Pb20)

Tin/Lead finish offers good solderability and electrical conductivity for reliable connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options, enhancing compatibility with various circuit layouts.

Minimum Breakdown Voltage: 6 V

Having the same minimum breakdown voltage as nominal ensures consistent performance and protection under different operating conditions.

Peak Reflow Temperature °C: 235

Sustaining high reflow temperatures indicates the device's robust construction and reliability during manufacturing processes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The specific diode type indicates its purpose of suppressing voltage transients, ensuring protection for sensitive components in the circuit.

Technology: AVALANCHE

Avalanche technology offers superior performance in handling high-energy transients by effectively clamping voltage spikes and protecting downstream components.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering during assembly and ensures mechanical stability for long-term reliability.

Polarity: UNIDIRECTIONAL

Unidirectional protection ensures that voltage spikes are clamped in a single direction, preventing damage to components from reversed polarity events.

Maximum Clamping Voltage: 12 V

With a maximum clamping voltage of 12V, the device limits the voltage spikes to ensure the protection of downstream components within a safe threshold.

Diode Element Material: SILICON

Using Silicon as the diode element material provides high reliability, fast response time, and efficient clamping capability for transient voltage suppression.

Technical Specifications

Transient Suppression Devices NUP4201DR2 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6 V

Maximum Clamping Voltage:

12 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NUP4201DR2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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