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NTST60100CTG

Onsemi

NTST60100CTG by Onsemi

NTST60100CTG by Onsemi is a Schottky rectifier diode with common cathode configuration. It has a max output current of 30A and max repetitive peak reverse voltage of 100V. Ideal for efficiency applications, operating b/w -40 to 150 °C, it features a plastic/epoxy package body material in a rectangular shape with flange mount style.

Median Price

$1.470

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 176 parts In-Stock

1+ parts

$1.470

100+ parts

$1.380

1k+ parts

$1.250

10k+ parts

$1.250

176

$1.470

$1.380

$1.250

$1.250

Distributors (In-Stock)

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Digiode

USA . 2,187 parts In-Stock

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$1.396

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2,187

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Vyrian

USA . 8,730 parts In-Stock

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8,730

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Flip Electronics

USA . 150 parts In-Stock

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150

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Chip Stock

USA . 145 parts In-Stock

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145

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Distributors (Availability)

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Ampacity Inc.

Singapore . 58 parts In-Stock

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$1.250

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58

$1.250

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Corphita

USA . 1,958 parts In-Stock

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$1.323

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$1.323

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Corohmni

South Africa . 199 parts In-Stock

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$1.470

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199

$1.470

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AZTECH Wire

Italy . 888 parts In-Stock

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$8.640

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888

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Perfect Parts

USA . 24,027 parts In-Stock

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SupplyDigital Components

Austria . 5,439 parts In-Stock

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Kulean Microsystems

USA . 4,774 parts In-Stock

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Problanco Electronics

Mexico . 3,787 parts In-Stock

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TANS Electronics

Latvia . 3,594 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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UHIMA Technologies

Türkiye . 841 parts In-Stock

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Overview

Discover the power of efficiency with the NTST60100CTG diodes by Onsemi. Crafted with precision and quality in mind, these diodes offer unparalleled performance and reliability. Whether you're looking to boost energy efficiency or enhance circuit protection, this product delivers on all fronts. With a maximum output current of 30A and a maximum repetitive peak reverse voltage of 100V, the NTST60100CTG is the perfect choice for a wide range of applications. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Unlock new possibilities with the NTST60100CTG diodes today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient flow of electric current and better performance.

Maximum Reverse Current: 1000 uA

Low maximum reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into various circuit designs.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diodes in different circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure installation and reliable performance in various applications.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where power consumption needs to be optimized.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stability and reliability in demanding environments.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature allows for operation in extreme cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and maintenance.

Case Connection: CATHODE

Having cathode as the case connection helps in efficient heat dissipation and electrical conductivity.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC current, making it versatile for various applications.

Maximum Forward Voltage (VF): 0.84 V

Low maximum forward voltage ensures minimal voltage drop and energy efficiency.

Maximum Output Current: 30 A

High maximum output current capability makes it suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching, enhancing the diode's performance.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections on circuit boards.

No. of Elements: 2

Having 2 elements allows for more versatility in circuit design and current handling capacity.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage ensures reliable operation in high voltage scenarios.

Maximum Non Repetitive Peak Forward Current: 250 A

High maximum non-repetitive peak forward current capability allows for handling surge currents without damage.

Diode Element Material: SILICON

Silicon material ensures stable and reliable performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers NTST60100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

1000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTST60100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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