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NTST40120CTH

Onsemi

NTST40120CTH by Onsemi

NTST40120CTH by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -40 to 150 °C, ideal for efficiency applications requiring a max forward voltage of 0.71V. The package style is flange mount with through-hole terminals in a rectangular shape made of plastic/epoxy material.

Median Price

$1.245

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 174,300 parts In-Stock

1+ parts

-

100+ parts

$1.200

1k+ parts

$0.996

10k+ parts

$0.888

174,300

-

$1.200

$0.996

$0.888

DigiKey

USA . 174,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.500

10k+ parts

-

174,300

-

-

$1.500

-

Verical

USA . 172,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.245

10k+ parts

$1.110

172,250

-

-

$1.245

$1.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,284 parts In-Stock

1+ parts

$0.937

100+ parts

-

1k+ parts

-

10k+ parts

-

2,284

$0.937

-

-

-

Vyrian

USA . 1,019 parts In-Stock

1+ parts

$0.986

100+ parts

-

1k+ parts

-

10k+ parts

-

1,019

$0.986

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 355 parts In-Stock

1+ parts

$0.887

100+ parts

-

1k+ parts

-

10k+ parts

-

355

$0.887

-

-

-

Corohmni

South Africa . 291 parts In-Stock

1+ parts

$0.986

100+ parts

-

1k+ parts

-

10k+ parts

-

291

$0.986

-

-

-

Microchip USA

USA . 4,584 parts In-Stock

1+ parts

$6.175

100+ parts

-

1k+ parts

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10k+ parts

-

4,584

$6.175

-

-

-

Kepictronics

USA . 177,300 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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177,300

-

-

-

-

Continental Prestige Electronics

USA . 174,300 parts In-Stock

1+ parts

-

100+ parts

$0.798

1k+ parts

-

10k+ parts

-

174,300

-

$0.798

-

-

SupplyDigital Components

Austria . 7,590 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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7,590

-

-

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TANS Electronics

Latvia . 6,099 parts In-Stock

1+ parts

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100+ parts

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6,099

-

-

-

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A-Z Elektronik GmbH

Germany . 4,881 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,881

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-

-

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Kulean Microsystems

USA . 4,545 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,545

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Problanco Electronics

Mexico . 3,523 parts In-Stock

1+ parts

-

100+ parts

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3,523

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UHIMA Technologies

Türkiye . 548 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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548

-

-

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-

Overview

When it comes to efficiency and reliability, look no further than the NTST40120CTH by Onsemi. As a leading manufacturer in the industry of Diodes & Rectifiers, Onsemi has crafted a product that exceeds expectations. This common cathode, 2-element diode offers customers a high-quality solution for their electronic needs. With a maximum output current of 20A and a maximum repetitive peak reverse voltage of 120V, this Schottky technology diode is perfect for a wide range of applications. Trust in Onsemi to deliver value, benefits, and advantages with the NTST40120CTH.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diodes, ensuring a long lifespan.

Configuration: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient and reliable operation in circuits.

Package Shape: RECTANGULAR

Rectangular package shape helps in easy placement and installation in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures stability and reliability even in extreme conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C enables operation in a wide range of temperature environments.

Maximum Output Current: 20 A

With a maximum output current of 20 A, this diode is suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching capabilities, making this diode efficient and ideal for high-frequency circuits.

Maximum Repetitive Peak Reverse Voltage: 120 V

The high repetitive peak reverse voltage of 120 V provides protection against voltage spikes and ensures safe operation in varied conditions.

Technical Specifications

Diodes & Rectifiers NTST40120CTH attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTST40120CTH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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