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NTST20120CT

Onsemi

NTST20120CT by Onsemi

NTST20120CT by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 10A. It operates b/w -40 to 150 °C, ideal for efficiency applications requiring a max repetitive peak reverse voltage of 120V. The package style is flange mount with a plastic/epoxy body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,381 parts In-Stock

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Vyrian

USA . 452 parts In-Stock

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Kulean Microsystems

USA . 6,752 parts In-Stock

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Problanco Electronics

Mexico . 6,396 parts In-Stock

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TANS Electronics

Latvia . 2,963 parts In-Stock

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SupplyDigital Components

Austria . 2,156 parts In-Stock

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Corphita

USA . 1,232 parts In-Stock

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UHIMA Technologies

Türkiye . 265 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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Overview

Unleash the power of efficiency with the NTST20120CT by Onsemi! This high-quality diode & rectifier boasts a common cathode configuration and two elements, offering superior performance in a wide range of applications. With a maximum output current of 10A and a maximum repetitive peak reverse voltage of 120V, this Schottky technology-based diode is a reliable choice for boosting productivity and performance. Trust Onsemi's reputation for excellence and choose the NTST20120CT for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements, ensuring a long lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient and reliable current flow through both diode elements.

Package Shape: RECTANGULAR

Enables easy and secure mounting in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for demanding environments.

Diode Type: RECTIFIER DIODE

Designed specifically for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Output Current: 10 A

Capable of handling high currents, making it suitable for power applications.

Technology: SCHOTTKY

Provides low forward voltage drop and fast switching speeds, ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 120 V

Offers reliable reverse voltage protection for connected circuits.

Maximum Non Repetitive Peak Forward Current: 120 A

Can handle short-term high current surges without damage.

Diode Element Material: SILICON

Provides good conductivity and efficiency for the diode elements.

Technical Specifications

Diodes & Rectifiers NTST20120CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NTST20120CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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