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NTST40H120ECTG

Onsemi

NTST40H120ECTG by Onsemi

NTST40H120ECTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -40 to 150°C, has a max reverse voltage of 120V, and is ideal for high-efficiency applications.

Median Price

$1.290

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 122 parts In-Stock

1+ parts

$0.254

100+ parts

-

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122

$0.254

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Mouser Electronics

USA . 7 parts In-Stock

1+ parts

$2.160

100+ parts

$1.420

1k+ parts

$0.915

10k+ parts

$0.885

7

$2.160

$1.420

$0.915

$0.885

DigiKey

USA . 2,850 parts In-Stock

1+ parts

-

100+ parts

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$1.100

10k+ parts

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2,850

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$1.100

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Flip Electronics (Authorized)

USA . 2,800 parts In-Stock

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2,800

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Rochester

USA . 2,600 parts In-Stock

1+ parts

-

100+ parts

$1.290

1k+ parts

$1.070

10k+ parts

$0.955

2,600

-

$1.290

$1.070

$0.955

Verical

USA . 1,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.337

10k+ parts

$1.193

1,800

-

-

$1.337

$1.193

Chip1Stop

Japan . 122 parts In-Stock

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-

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122

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Distributors (In-Stock)

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Vyrian

USA . 981 parts In-Stock

1+ parts

$0.279

100+ parts

-

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981

$0.279

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Digiode

USA . 619 parts In-Stock

1+ parts

$0.504

100+ parts

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619

$0.504

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Flip Electronics

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 58 parts In-Stock

1+ parts

$0.279

100+ parts

-

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58

$0.279

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Component Stockers USA

USA . 2,276 parts In-Stock

1+ parts

$0.290

100+ parts

$0.290

1k+ parts

$0.910

10k+ parts

-

2,276

$0.290

$0.290

$0.910

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Corphita

USA . 2,040 parts In-Stock

1+ parts

$0.477

100+ parts

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2,040

$0.477

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Microchip USA

USA . 260 parts In-Stock

1+ parts

$6.630

100+ parts

$6.590

1k+ parts

$6.570

10k+ parts

$6.550

260

$6.630

$6.590

$6.570

$6.550

SupplyDigital Components

Austria . 4,816 parts In-Stock

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Kulean Microsystems

USA . 3,400 parts In-Stock

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3,400

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Continental Prestige Electronics

USA . 2,850 parts In-Stock

1+ parts

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100+ parts

$0.794

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2,850

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$0.794

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Problanco Electronics

Mexico . 2,532 parts In-Stock

1+ parts

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2,532

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TANS Electronics

Latvia . 624 parts In-Stock

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624

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UHIMA Technologies

Türkiye . 272 parts In-Stock

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272

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Perfect Parts

USA . 20 parts In-Stock

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20

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Overview

Unlock new levels of efficiency with the NTST40H120ECTG by Onsemi. This high-quality common cathode rectifier diode offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications. With a maximum output current of 20A and a maximum reverse voltage of 120V, this Schottky technology diode is designed to maximize efficiency while providing superior performance in any environment. Trust Onsemi's reputation for excellence and choose the NTST40H120ECTG for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Current: 25 uA

Low reverse current ensures efficient operation and minimizes energy loss.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and installation in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Diode Type: RECTIFIER DIODE

Specifically designed for converting alternating current (AC) to direct current (DC), making it ideal for efficiency applications.

Technical Specifications

Diodes & Rectifiers NTST40H120ECTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.93 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

25 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTST40H120ECTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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