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NTST40120CT

Onsemi

NTST40120CT by Onsemi

NTST40120CT by Onsemi is a Schottky rectifier diode with 2 elements, max output current of 20A, and max repetitive peak reverse voltage of 120V. It is commonly used for efficiency applications due to its common cathode configuration and plastic/epoxy package body material. Operating temperature ranges from -40 °C to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,615 parts In-Stock

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Digiode

USA . 412 parts In-Stock

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TANS Electronics

Latvia . 7,846 parts In-Stock

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Kulean Microsystems

USA . 6,579 parts In-Stock

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SupplyDigital Components

Austria . 2,153 parts In-Stock

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Problanco Electronics

Mexico . 1,920 parts In-Stock

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Corphita

USA . 1,570 parts In-Stock

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UHIMA Technologies

Türkiye . 397 parts In-Stock

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Corohmni

South Africa . 247 parts In-Stock

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Overview

Unlock new levels of efficiency with the NTST40120CT by Onsemi. This high-quality diode rectifier offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. Whether you're looking to optimize power usage or increase overall system efficiency, this product delivers exceptional value and benefits. Experience the advantages of Onsemi's superior manufacturing standards and trust in the quality of the NTST40120CT for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides good protection for the diodes and helps in reducing the overall weight of the product.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and reduced power loss in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand high temperature environments without compromising its performance.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to traditional diodes, making them ideal for high efficiency applications.

Maximum Output Current: 20 A

With a maximum output current of 20 A, this diode can handle high current loads effectively.

Technical Specifications

Diodes & Rectifiers NTST40120CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NTST40120CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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