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NTST20120CTG

Onsemi

NTST20120CTG by Onsemi

NTST20120CTG by Onsemi is a common cathode rectifier diode with a max forward voltage of 1.1V and max output current of 10A. It is used for efficiency applications, with a temperature range of -40 to 150°C.

Median Price

$0.743

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 697 parts In-Stock

1+ parts

$0.345

100+ parts

-

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697

$0.345

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Chip1Stop

Japan . 697 parts In-Stock

1+ parts

$0.586

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-

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697

$0.586

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DigiKey

USA . 21,204 parts In-Stock

1+ parts

-

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10k+ parts

$0.320

21,204

-

-

-

$0.320

Flip Electronics (Authorized)

USA . 21,204 parts In-Stock

1+ parts

-

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21,204

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Rochester

USA . 10,810 parts In-Stock

1+ parts

-

100+ parts

$0.900

1k+ parts

$0.747

10k+ parts

$0.666

10,810

-

$0.900

$0.747

$0.666

Farnell

UK . 10,810 parts In-Stock

1+ parts

-

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$1.257

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10,810

-

-

$1.257

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Verical

USA . 10,345 parts In-Stock

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-

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$0.933

10k+ parts

$0.832

10,345

-

-

$0.933

$0.832

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,746 parts In-Stock

1+ parts

$0.328

100+ parts

-

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1,746

$0.328

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.658

100+ parts

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100

$0.658

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Flip Electronics

USA . 21,204 parts In-Stock

1+ parts

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21,204

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DigiKey Marketplace

USA . 20,000 parts In-Stock

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Vyrian

USA . 10,815 parts In-Stock

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10,815

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 297 parts In-Stock

1+ parts

$0.040

100+ parts

-

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297

$0.040

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.151

100+ parts

$0.137

1k+ parts

$0.124

10k+ parts

-

2,500

$0.151

$0.137

$0.124

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Ampacity Inc.

Singapore . 10,754 parts In-Stock

1+ parts

$0.272

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10,754

$0.272

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Corphita

USA . 669 parts In-Stock

1+ parts

$0.310

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669

$0.310

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Corohmni

South Africa . 182 parts In-Stock

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$0.320

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182

$0.320

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Component Stockers USA

USA . 13,483 parts In-Stock

1+ parts

$0.340

100+ parts

$0.340

1k+ parts

$0.640

10k+ parts

$0.640

13,483

$0.340

$0.340

$0.640

$0.640

Argo Parts USA

USA . 2,338 parts In-Stock

1+ parts

$0.658

100+ parts

-

1k+ parts

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10k+ parts

$0.638

2,338

$0.658

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-

$0.638

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.658

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500

$0.658

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Microchip USA

USA . 6,834 parts In-Stock

1+ parts

$9.685

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6,834

$9.685

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Continental Prestige Electronics

USA . 10,810 parts In-Stock

1+ parts

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100+ parts

$0.994

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10,810

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$0.994

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A-Z Elektronik GmbH

Germany . 4,985 parts In-Stock

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4,985

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TANS Electronics

Latvia . 3,617 parts In-Stock

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3,617

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Problanco Electronics

Mexico . 3,573 parts In-Stock

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Perfect Parts

USA . 1,816 parts In-Stock

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Kulean Microsystems

USA . 1,032 parts In-Stock

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Kepictronics

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 353 parts In-Stock

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353

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SupplyDigital Components

Austria . 340 parts In-Stock

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340

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Overview

Discover the NTST20120CTG by Onsemi, a high-quality diode and rectifier that brings numerous advantages to your applications. With its common cathode configuration and two elements, this product offers exceptional efficiency and performance. Manufactured by industry leader Onsemi, you can trust in their expertise and commitment to delivering top-notch solutions. The NTST20120CTG is designed with a rectangular package shape and flange mount style, ensuring easy installation and integration. Experience the benefits of this diode's maximum forward voltage of 1.1V and maximum output current of 10A, providing reliable and efficient power delivery. Whether you need it for industrial, automotive, or consumer electronics applications, this Schottky diode is here to exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the diodes, making the product long-lasting and reliable.

Maximum Reverse Current: 700 uA

Low reverse current indicates less power loss and higher efficiency in the operation of the diodes.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diodes to function in a wide range of environmental conditions.

Technology: SCHOTTKY

The Schottky technology results in lower forward voltage drop and faster switching characteristics, making the diodes efficient and suitable for high-speed applications.

Maximum Repetitive Peak Reverse Voltage: 120 V

The high reverse voltage rating ensures that the diodes can handle fluctuations in the circuit without damage, providing safety and reliability.

Technical Specifications

Diodes & Rectifiers NTST20120CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

700 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTST20120CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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