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NTST30100CTH

Onsemi

NTST30100CTH by Onsemi

NTST30100CTH by Onsemi is a Schottky rectifier diode with 100V peak reverse voltage and 15A output current. It has a common cathode configuration, operating from -40 to 150 °C, making it ideal for high-efficiency applications. The package style is flange mount with a plastic/epoxy body material, suitable for through-hole mounting.

Median Price

$0.521

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 800 parts In-Stock

1+ parts

-

100+ parts

$0.502

1k+ parts

$0.417

10k+ parts

$0.371

800

-

$0.502

$0.417

$0.371

DigiKey

USA . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

-

800

-

-

$0.630

-

Verical

USA . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.521

10k+ parts

$0.464

800

-

-

$0.521

$0.464

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,028 parts In-Stock

1+ parts

$0.391

100+ parts

-

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2,028

$0.391

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Chip Stock

USA . 31,000 parts In-Stock

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31,000

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Vyrian

USA . 4,301 parts In-Stock

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4,301

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.079

100+ parts

$0.072

1k+ parts

$0.065

10k+ parts

-

20

$0.079

$0.072

$0.065

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Corphita

USA . 109 parts In-Stock

1+ parts

$0.371

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-

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109

$0.371

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Corohmni

South Africa . 371 parts In-Stock

1+ parts

$0.412

100+ parts

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371

$0.412

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Component Stockers USA

USA . 719 parts In-Stock

1+ parts

$0.420

100+ parts

$0.390

1k+ parts

-

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719

$0.420

$0.390

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TANS Electronics

Latvia . 7,751 parts In-Stock

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7,751

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Problanco Electronics

Mexico . 5,646 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,393 parts In-Stock

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Kulean Microsystems

USA . 5,375 parts In-Stock

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Kepictronics

USA . 3,750 parts In-Stock

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RC Electronics

USA . 3,420 parts In-Stock

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SupplyDigital Components

Austria . 2,623 parts In-Stock

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2,623

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UHIMA Technologies

Türkiye . 716 parts In-Stock

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716

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Overview

Unlock new levels of efficiency with the NTST30100CTH diode by Onsemi. Designed for maximum performance and reliability, this product offers unmatched quality and value to customers. Whether you're in need of a common cathode diode for your power supply or battery charging applications, this Schottky technology diode is the perfect solution. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 100V, the NTST30100CTH ensures optimal functionality even in extreme temperatures. Trust Onsemi for all your diode and rectifier needs and experience the difference in quality and efficiency today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy circuit design and 2 elements provide redundancy.

Package Shape: RECTANGULAR

Compact size and shape makes it easy to integrate into different electronic devices.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for various applications.

Diode Type: RECTIFIER DIODE

Ideal for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Output Current: 15 A

Capable of handling high current output, suitable for power applications.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching, leading to improved efficiency.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can withstand high reverse voltage, making it reliable for long-term use.

Technical Specifications

Diodes & Rectifiers NTST30100CTH attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTST30100CTH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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