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NTST30120CTH

Onsemi

NTST30120CTH by Onsemi

The Onsemi NTST30120CTH is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It operates b/w -40 °C to 150°C, ideal for efficiency applications. With a max repetitive peak reverse voltage of 120V and non-repetitive peak forward current of 150A, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,057 parts In-Stock

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Vyrian

USA . 1,790 parts In-Stock

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1,790

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Problanco Electronics

Mexico . 8,144 parts In-Stock

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8,144

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SupplyDigital Components

Austria . 5,470 parts In-Stock

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Corphita

USA . 2,212 parts In-Stock

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Kulean Microsystems

USA . 1,623 parts In-Stock

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TANS Electronics

Latvia . 323 parts In-Stock

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UHIMA Technologies

Türkiye . 269 parts In-Stock

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Corohmni

South Africa . 187 parts In-Stock

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Overview

Enhance the efficiency of your electronic devices with the Onsemi NTST30120CTH diode rectifier. Manufactured by a reputable company, this product offers superior quality and reliability. With its common cathode configuration and Schottky technology, it provides optimal performance in a wide range of applications. Experience the benefits of fast switching speed and low forward voltage drop, ensuring smooth operation and increased energy savings. Trust Onsemi for cutting-edge solutions that deliver value and performance to meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good insulation and protection for the diodes, ensuring reliability and durability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuit designs, and having 2 elements increases efficiency and performance.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and fit into various electronic devices or circuit boards.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diodes within a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure and stable mounting on a surface, ensuring proper functionality.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where energy efficiency is a priority.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -40 °C

Capable of operating at low temperatures, making it suitable for a wide range of environments.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and solderability for secure connections within a circuit.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection within a circuit.

Case Connection: CATHODE

The cathode case connection is convenient for circuit design and helps in proper polarity identification.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting AC to DC, making this diode suitable for power supply applications.

Maximum Output Current: 15 A

With a high maximum output current, this diode can handle heavy loads and provide reliable performance.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching, improving overall efficiency and performance.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy installation, making it suitable for manual or automated assembly processes.

No. of Elements: 2

Having 2 diode elements increases functionality and performance, making it versatile for various applications.

Maximum Repetitive Peak Reverse Voltage: 120 V

With a high maximum peak reverse voltage, this diode can withstand reverse voltage stress in a circuit.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum peak forward current allows the diode to handle sudden spikes in current without damage.

Diode Element Material: SILICON

Silicon diode element material offers good performance and reliability, ensuring long-term operation.

Technical Specifications

Diodes & Rectifiers NTST30120CTH attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTST30120CTH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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