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NTST30120CTG

Onsemi

NTST30120CTG by Onsemi

NTST30120CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It operates b/w -40 to 150 °C, ideal for efficiency applications. The diode has a max forward voltage of 0.76V and repetitive peak reverse voltage of 120V in a flange mount package style.

Median Price

$1.010

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14 parts In-Stock

1+ parts

$1.660

100+ parts

$1.090

1k+ parts

$1.090

10k+ parts

$0.800

14

$1.660

$1.090

$1.090

$0.800

Rochester

USA . 50,666 parts In-Stock

1+ parts

-

100+ parts

$0.991

1k+ parts

$0.823

10k+ parts

$0.733

50,666

-

$0.991

$0.823

$0.733

DigiKey

USA . 48,482 parts In-Stock

1+ parts

-

100+ parts

-

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$0.850

10k+ parts

$0.850

48,482

-

-

$0.850

$0.850

Verical

USA . 46,543 parts In-Stock

1+ parts

-

100+ parts

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$1.028

10k+ parts

$0.917

46,543

-

-

$1.028

$0.917

Flip Electronics (Authorized)

USA . 813 parts In-Stock

1+ parts

-

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813

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Digiode

USA . 731 parts In-Stock

1+ parts

$0.772

100+ parts

-

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731

$0.772

-

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Vyrian

USA . 1,131 parts In-Stock

1+ parts

$0.779

100+ parts

-

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1,131

$0.779

-

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Flip Electronics

USA . 813 parts In-Stock

1+ parts

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813

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,410 parts In-Stock

1+ parts

$0.732

100+ parts

-

1k+ parts

-

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1,410

$0.732

-

-

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Corohmni

South Africa . 200 parts In-Stock

1+ parts

$0.779

100+ parts

-

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200

$0.779

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Continental Prestige Electronics

USA . 48,226 parts In-Stock

1+ parts

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100+ parts

$0.779

1k+ parts

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48,226

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$0.779

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QUARKTWIN TECHNOLOGY LTD

USA . 27,878 parts In-Stock

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27,878

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 6,385 parts In-Stock

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6,385

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A-Z Elektronik GmbH

Germany . 5,111 parts In-Stock

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5,111

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Microchip USA

USA . 4,920 parts In-Stock

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4,920

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SupplyDigital Components

Austria . 2,972 parts In-Stock

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2,972

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Perfect Parts

USA . 2,148 parts In-Stock

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2,148

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Kulean Microsystems

USA . 1,698 parts In-Stock

1+ parts

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1,698

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UHIMA Technologies

Türkiye . 719 parts In-Stock

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719

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TANS Electronics

Latvia . 349 parts In-Stock

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349

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Overview

Discover the NTST30120CTG by Onsemi, a high-quality diode & rectifier that offers top-notch efficiency and performance. Manufactured by Onsemi, known for their superior products, this device is perfect for various applications where reliability is key. With a common cathode configuration and two elements, this diode provides a maximum output current of 15A and a maximum repetitive peak reverse voltage of 120V. Whether you're looking to enhance your power supply or improve your circuit efficiency, the NTST30120CTG is the solution you need. Upgrade your electronics with this cutting-edge technology and experience the benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good thermal stability and protection, making the product durable and reliable.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient and optimized circuit design.

Package Shape: RECTANGULAR

Rectangular package shape makes it easy to mount and integrate into various electronic systems.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and usage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy installation and secure mounting.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where energy conservation is important.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance even in harsh environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the product can operate in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and solderability for easy installation.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and reduces complexity.

Case Connection: CATHODE

Case connection at cathode ensures proper grounding and protection against voltage spikes.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of alternating current (AC) to direct current (DC) in electronic circuits.

Maximum Forward Voltage (VF): 0.76 V

Low maximum forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 15 A

High maximum output current rating enables the product to handle heavy load conditions without overheating.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop for improved efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy and secure PCB mounting.

No. of Elements: 2

Having 2 elements provides redundancy and improves overall reliability of the product.

Maximum Repetitive Peak Reverse Voltage: 120 V

High maximum repetitive peak reverse voltage rating ensures protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum non-repetitive peak forward current rating allows for handling of surge currents without damage.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and reliable performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers NTST30120CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.76 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTST30120CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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