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NSVJ3910SB3T1G

Onsemi

NSVJ3910SB3T1G by Onsemi

NSVJ3910SB3T1G by Onsemi is a N-CHANNEL FET with 3 terminals, ideal for AMPLIFIER applications. It operates in DEPLETION MODE with max power dissipation of 0.4W and can handle a max drain current of 0.05A. Suitable for small outline packages, it has an operating temperature range from -55°C to 150°C.

Median Price

$0.361

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 50 parts In-Stock

1+ parts

$1.030

100+ parts

$0.475

1k+ parts

$0.355

10k+ parts

-

50

$1.030

$0.475

$0.355

-

Mouser Electronics

USA . 9,504 parts In-Stock

1+ parts

$1.050

100+ parts

$0.395

1k+ parts

$0.275

10k+ parts

-

9,504

$1.050

$0.395

$0.275

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Verical

USA . 300,000 parts In-Stock

1+ parts

-

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$0.189

300,000

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$0.189

Farnell

UK . 1,203 parts In-Stock

1+ parts

-

100+ parts

$0.350

1k+ parts

$0.300

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1,203

-

$0.350

$0.300

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Element14

Singapore . 1,203 parts In-Stock

1+ parts

-

100+ parts

$0.361

1k+ parts

$0.309

10k+ parts

-

1,203

-

$0.361

$0.309

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 74 parts In-Stock

1+ parts

$0.267

100+ parts

-

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74

$0.267

-

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Digiode

USA . 1,231 parts In-Stock

1+ parts

$0.846

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-

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1,231

$0.846

-

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Flip Electronics

USA . 357,282 parts In-Stock

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-

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357,282

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Chip Stock

USA . 33,144 parts In-Stock

1+ parts

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33,144

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Rotakorn

Sweden . 15,000 parts In-Stock

1+ parts

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15,000

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NAC Semi

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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$0.440

12,000

-

-

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$0.440

Vyrian

USA . 7,869 parts In-Stock

1+ parts

-

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7,869

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IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.272

3,000

-

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-

$0.272

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,040 parts In-Stock

1+ parts

$0.164

100+ parts

-

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6,040

$0.164

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Corohmni

South Africa . 345 parts In-Stock

1+ parts

$0.189

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345

$0.189

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.262

100+ parts

-

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$0.251

10k+ parts

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500

$0.262

-

$0.251

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Continental Prestige Electronics

USA . 5,952 parts In-Stock

1+ parts

$0.557

100+ parts

$0.321

1k+ parts

$0.207

10k+ parts

$0.174

5,952

$0.557

$0.321

$0.207

$0.174

Corphita

USA . 292 parts In-Stock

1+ parts

$0.801

100+ parts

-

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292

$0.801

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.533

100+ parts

$1.395

1k+ parts

$1.257

10k+ parts

-

40

$1.533

$1.395

$1.257

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 12,508 parts In-Stock

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12,508

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Perfect Parts

USA . 8,624 parts In-Stock

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Kulean Microsystems

USA . 6,691 parts In-Stock

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6,691

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TANS Electronics

Latvia . 3,877 parts In-Stock

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SupplyDigital Components

Austria . 933 parts In-Stock

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933

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Problanco Electronics

Mexico . 566 parts In-Stock

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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389

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Kepictronics

USA . 60 parts In-Stock

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60

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Overview

Enhance your amplifier applications with the NSVJ3910SB3T1G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that deliver reliable performance. This N-CHANNEL Small Signal Field Effect Transistor offers customers value and benefits through its single configuration, depletion mode operation, and high power dissipation capabilities. With a compact package style and dual terminal position, this transistor is ideal for various amplification needs. Trust Onsemi to provide innovative solutions that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to damage, making the transistor suitable for various applications and environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer high input impedance, low output impedance, and fast switching speeds, making them ideal for many amplifier applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio and signal processing applications.

Surface Mount: YES

Enables easy and automated assembly onto circuit boards, saving time and effort during production.

Package Shape: RECTANGULAR

Facilitates efficient placement and routing on PCBs, optimizing space utilization in electronic devices.

Operating Mode: DEPLETION MODE

Offers flexibility in controlling current flow, making it suitable for a wide range of applications including voltage regulation.

Maximum Power Dissipation (Abs): 0.4 W

Can handle power dissipation effectively, ensuring stable operation under normal operating conditions.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides low noise and high input impedance characteristics, ideal for signal amplification and low-power applications.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, offering reliability in harsh environments or applications with elevated heat levels.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, stability, and reliability, ensuring consistent operation over a long lifespan.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without performance degradation, suitable for applications where temperature fluctuations are a concern.

Maximum Drain Current (ID): 0.05 A

Can handle moderate current levels, making it suitable for various signal processing and amplification tasks.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures safe and reliable soldering during assembly, preventing damage to the transistor and ensuring proper functionality.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering, ensuring proper attachment to PCBs without risk of heat damage.

Reference Standard: AEC-Q101

Complies with automotive-grade standards, ensuring reliability and performance in demanding automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NSVJ3910SB3T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

JUNCTION

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NSVJ3910SB3T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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