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NSVJ2394SA3T1G

Onsemi

NSVJ2394SA3T1G by Onsemi

NSVJ2394SA3T1G by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.2W and can handle a max drain current of 0.05A. Ideal for AMPLIFIER applications due to its small outline package style and junction technology.

Median Price

$0.324

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,591 parts In-Stock

1+ parts

$0.226

100+ parts

$0.215

1k+ parts

$0.205

10k+ parts

-

2,591

$0.226

$0.215

$0.205

-

Newark

USA . 871 parts In-Stock

1+ parts

$0.774

100+ parts

$0.464

1k+ parts

$0.337

10k+ parts

-

871

$0.774

$0.464

$0.337

-

Mouser Electronics

USA . 5,099 parts In-Stock

1+ parts

$0.870

100+ parts

$0.381

1k+ parts

$0.257

10k+ parts

$0.217

5,099

$0.870

$0.381

$0.257

$0.217

DigiKey

USA . 8,863 parts In-Stock

1+ parts

$0.950

100+ parts

$0.387

1k+ parts

$0.269

10k+ parts

$0.204

8,863

$0.950

$0.387

$0.269

$0.204

Chip1Stop

Japan . 5,644 parts In-Stock

1+ parts

-

100+ parts

$0.267

1k+ parts

$0.219

10k+ parts

$0.214

5,644

-

$0.267

$0.219

$0.214

Flip Electronics (Authorized)

USA . 2,685 parts In-Stock

1+ parts

-

100+ parts

-

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-

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2,685

-

-

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Verical

USA . 2,591 parts In-Stock

1+ parts

-

100+ parts

$0.215

1k+ parts

$0.205

10k+ parts

-

2,591

-

$0.215

$0.205

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Farnell

UK . 1,477 parts In-Stock

1+ parts

-

100+ parts

$0.213

1k+ parts

$0.172

10k+ parts

$0.157

1,477

-

$0.213

$0.172

$0.157

Element14

Singapore . 1,477 parts In-Stock

1+ parts

-

100+ parts

$0.382

1k+ parts

$0.307

10k+ parts

$0.281

1,477

-

$0.382

$0.307

$0.281

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 977 parts In-Stock

1+ parts

$0.313

100+ parts

-

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-

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977

$0.313

-

-

-

Chip Stock

USA . 7,520 parts In-Stock

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-

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7,520

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Vyrian

USA . 6,094 parts In-Stock

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-

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6,094

-

-

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

1+ parts

-

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6,000

-

-

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.431

6,000

-

-

-

$0.431

Flip Electronics

USA . 2,685 parts In-Stock

1+ parts

-

100+ parts

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2,685

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-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

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100

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ComSIT Distribution GmbH

Germany . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,947 parts In-Stock

1+ parts

$0.181

100+ parts

-

1k+ parts

-

10k+ parts

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5,947

$0.181

-

-

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Semicontronic

India . 5,495 parts In-Stock

1+ parts

$0.181

100+ parts

$0.176

1k+ parts

$0.176

10k+ parts

-

5,495

$0.181

$0.176

$0.176

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Corohmni

South Africa . 486 parts In-Stock

1+ parts

$0.213

100+ parts

-

1k+ parts

-

10k+ parts

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486

$0.213

-

-

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.290

100+ parts

$0.267

1k+ parts

$0.250

10k+ parts

-

20

$0.290

$0.267

$0.250

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Corphita

USA . 2,496 parts In-Stock

1+ parts

$0.296

100+ parts

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2,496

$0.296

-

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Continental Prestige Electronics

USA . 2,603 parts In-Stock

1+ parts

$0.616

100+ parts

$0.351

1k+ parts

$0.226

10k+ parts

$0.212

2,603

$0.616

$0.351

$0.226

$0.212

Aztec Data Supply Inc.

USA . 3,836 parts In-Stock

1+ parts

$0.760

100+ parts

-

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3,836

$0.760

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QUARKTWIN TECHNOLOGY LTD

USA . 17,158 parts In-Stock

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17,158

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Perfect Parts

USA . 16,182 parts In-Stock

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SupplyDigital Components

Austria . 7,113 parts In-Stock

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 5,096 parts In-Stock

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Kulean Microsystems

USA . 4,883 parts In-Stock

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4,883

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TANS Electronics

Latvia . 3,583 parts In-Stock

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3,583

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Lixinc

USA . 2,995 parts In-Stock

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2,995

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Argo Parts USA

USA . 2,162 parts In-Stock

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2,162

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UHIMA Technologies

Türkiye . 555 parts In-Stock

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555

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Overview

Discover the NSVJ2394SA3T1G by Onsemi, a high-quality N-channel small signal field effect transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this FET is ideal for amplifier applications. With its compact size and efficient design, this transistor provides customers with superior functionality and value. Whether you're looking to enhance your audio systems or improve signal processing, the NSVJ2394SA3T1G is the perfect solution for your needs. Elevate your projects with this top-of-the-line component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient control of current flow in the transistor, enhancing performance in amplifier applications.

Configuration: SINGLE

Simplifies the setup and usage of the transistor in amplifier circuits, reducing complexity and potential errors.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high-quality signal processing and output.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, facilitating the overall assembly process.

Package Shape: RECTANGULAR

Allows for efficient placement and orientation on circuit boards, optimizing space utilization and overall design.

Terminal Form: GULL WING

Facilitates reliable and stable connections with other components, enhancing overall circuit performance.

Operating Mode: DEPLETION MODE

Provides flexibility in controlling current flow and optimizing amplifier performance based on specific requirements.

No. of Terminals: 3

Offers a simple and compact design, suitable for basic amplifier circuits and applications.

Maximum Power Dissipation (Abs): 0.2 W

Ensures safe operation and prevents overheating, enhancing the longevity and reliability of the transistor.

Package Style (Meter): SMALL OUTLINE

Enhances portability and ease of integration into various electronic devices and systems.

Field Effect Transistor Technology: JUNCTION

Utilizes advanced technology for efficient current control and amplification, resulting in high performance and reliability.

Maximum Operating Temperature: 150 °C

Allows for operation in a wide range of temperatures, making the transistor suitable for diverse environmental conditions.

Transistor Element Material: SILICON

Offers high conductivity and stability, ensuring consistent transistor performance over time.

Minimum Operating Temperature: -55 °C

Provides reliable operation even in low temperature conditions, expanding the range of potential applications.

Terminal Finish: TIN BISMUTH

Improves solderability and connection reliability, reducing the risk of short circuits or malfunctions.

Maximum Drain Current (ID): 0.05 A

Allows for efficient current flow and power handling, supporting high-quality signal amplification.

Terminal Position: DUAL

Facilitates easy and secure connection in amplifier circuits, enabling stable performance and signal processing.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and mounting of the transistor, preventing damage or performance issues during assembly.

Peak Reflow Temperature °C: 260

Enables secure and durable soldering of the transistor, ensuring stable connections and long-lasting performance.

Reference Standard: AEC-Q101

Complies with industry standards for quality and performance, ensuring reliability and consistency in operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NSVJ2394SA3T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

JUNCTION

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NSVJ2394SA3T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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