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NSVJ3557SA3T1G

Onsemi

NSVJ3557SA3T1G by Onsemi

NSVJ3557SA3T1G by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.2W and can handle a max drain current of 0.05A. This small outline transistor is ideal for amplifier applications due to its high temperature range and AEC-Q101 standard compliance.

Median Price

$0.344

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,628 parts In-Stock

1+ parts

$0.203

100+ parts

$0.180

1k+ parts

$0.178

10k+ parts

$0.177

5,628

$0.203

$0.180

$0.178

$0.177

Chip1Stop

Japan . 7 parts In-Stock

1+ parts

$0.296

100+ parts

-

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7

$0.296

-

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Future Electronics

Canada . 19 parts In-Stock

1+ parts

$0.525

100+ parts

$0.390

1k+ parts

$0.345

10k+ parts

$0.295

19

$0.525

$0.390

$0.345

$0.295

Newark

USA . 4,542 parts In-Stock

1+ parts

$0.658

100+ parts

$0.347

1k+ parts

$0.279

10k+ parts

-

4,542

$0.658

$0.347

$0.279

-

DigiKey

USA . 37,069 parts In-Stock

1+ parts

$0.860

100+ parts

$0.347

1k+ parts

$0.239

10k+ parts

$0.181

37,069

$0.860

$0.347

$0.239

$0.181

Mouser Electronics

USA . 770 parts In-Stock

1+ parts

$1.010

100+ parts

$0.396

1k+ parts

$0.255

10k+ parts

$0.186

770

$1.010

$0.396

$0.255

$0.186

Avnet

USA . 6,000 parts In-Stock

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-

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6,000

-

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Verical

USA . 5,628 parts In-Stock

1+ parts

-

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$0.180

1k+ parts

$0.178

10k+ parts

$0.177

5,628

-

$0.180

$0.178

$0.177

Farnell

UK . 4,567 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.158

10k+ parts

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4,567

-

$0.225

$0.158

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Element14

Singapore . 4,562 parts In-Stock

1+ parts

-

100+ parts

$0.393

1k+ parts

$0.258

10k+ parts

$0.257

4,562

-

$0.393

$0.258

$0.257

Rochester

USA . 680 parts In-Stock

1+ parts

-

100+ parts

$0.221

1k+ parts

$0.183

10k+ parts

$0.163

680

-

$0.221

$0.183

$0.163

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,003 parts In-Stock

1+ parts

$0.167

100+ parts

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2,003

$0.167

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Digiode

USA . 1,031 parts In-Stock

1+ parts

$0.267

100+ parts

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1,031

$0.267

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Flip Electronics

USA . 12,000 parts In-Stock

1+ parts

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12,000

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IBS Electronics

USA . 12,000 parts In-Stock

1+ parts

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$0.236

12,000

-

-

-

$0.236

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

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$0.342

6,000

-

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$0.342

Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,737 parts In-Stock

1+ parts

$0.142

100+ parts

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6,737

$0.142

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Corohmni

South Africa . 175 parts In-Stock

1+ parts

$0.167

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175

$0.167

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Corphita

USA . 2,092 parts In-Stock

1+ parts

$0.253

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2,092

$0.253

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Continental Prestige Electronics

USA . 3,138 parts In-Stock

1+ parts

$0.434

100+ parts

$0.278

1k+ parts

$0.170

10k+ parts

$0.136

3,138

$0.434

$0.278

$0.170

$0.136

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$2.138

100+ parts

$1.946

1k+ parts

$1.753

10k+ parts

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50

$2.138

$1.946

$1.753

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RC Electronics

USA . 61,559 parts In-Stock

1+ parts

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$0.250

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$0.230

10k+ parts

$0.220

61,559

-

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$0.230

$0.220

Perfect Parts

USA . 20,832 parts In-Stock

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Problanco Electronics

Mexico . 6,470 parts In-Stock

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6,470

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Infinite Electronics LLP (Excess)

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TANS Electronics

Latvia . 5,325 parts In-Stock

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SupplyDigital Components

Austria . 3,631 parts In-Stock

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3,631

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,470 parts In-Stock

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Lixinc

USA . 2,420 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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100

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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UHIMA Technologies

Türkiye . 11 parts In-Stock

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11

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Overview

Discover the NSVJ3557SA3T1G by Onsemi, a top-quality Small Signal Field Effect Transistor that guarantees exceptional performance and reliability. Onsemi is renowned for its cutting-edge technology and innovative solutions, making their products stand out in the market. Ideal for amplifier applications, this N-CHANNEL transistor offers unparalleled value, providing customers with superior functionality and efficiency. Upgrade your electronic projects with the NSVJ3557SA3T1G and experience the advantages of Onsemi's expertise firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow in the transistor, enhancing performance.

Configuration: SINGLE

Simplified design with single configuration for easy integration and usage.

Transistor Application: AMPLIFIER

Ideal for amplification applications, ensuring high-quality signal output.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, saving space and enhancing reliability.

Package Shape: RECTANGULAR

Optimal shape for efficient placement and soldering on circuit boards.

Operating Mode: DEPLETION MODE

Allows for easy control of current flow, enhancing the transistor's versatility.

Maximum Power Dissipation (Abs): 0.2 W

Efficient power dissipation capability ensures reliable performance under varying load conditions.

Field Effect Transistor Technology: JUNCTION

Junction technology offers high performance and reliability in the transistor's operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a wide range of applications.

Maximum Drain Current (ID): 0.05 A

Capable of handling high currents for robust performance in various circuit designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) NSVJ3557SA3T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

JUNCTION

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NSVJ3557SA3T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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